Stabilization of boron carbide via silicon doping

J. E. Proctor, V. Bhakhri, R. Hao, T. J. Prior, T. Scheler, E. Gregoryanz, Manish Chhowalla, F. Giulani

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

Original languageEnglish
Article number015401
JournalJournal of Physics Condensed Matter
Volume27
Issue number1
DOIs
Publication statusPublished - Jan 14 2014

Fingerprint

Boron carbide
boron carbides
Silicon
Stabilization
stabilization
Doping (additives)
Phase separation
Amorphization
silicon
Boron
Raman spectroscopy
boron
x ray diffraction
Carbon
Diffraction
ceramics
Transmission electron microscopy
X rays
transmission electron microscopy
Scanning electron microscopy

Keywords

  • Amorphization
  • Boron carbide
  • Ceramics
  • High pressure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Proctor, J. E., Bhakhri, V., Hao, R., Prior, T. J., Scheler, T., Gregoryanz, E., ... Giulani, F. (2014). Stabilization of boron carbide via silicon doping. Journal of Physics Condensed Matter, 27(1), [015401]. https://doi.org/10.1088/0953-8984/27/1/015401

Stabilization of boron carbide via silicon doping. / Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, Manish; Giulani, F.

In: Journal of Physics Condensed Matter, Vol. 27, No. 1, 015401, 14.01.2014.

Research output: Contribution to journalArticle

Proctor, JE, Bhakhri, V, Hao, R, Prior, TJ, Scheler, T, Gregoryanz, E, Chhowalla, M & Giulani, F 2014, 'Stabilization of boron carbide via silicon doping', Journal of Physics Condensed Matter, vol. 27, no. 1, 015401. https://doi.org/10.1088/0953-8984/27/1/015401
Proctor JE, Bhakhri V, Hao R, Prior TJ, Scheler T, Gregoryanz E et al. Stabilization of boron carbide via silicon doping. Journal of Physics Condensed Matter. 2014 Jan 14;27(1). 015401. https://doi.org/10.1088/0953-8984/27/1/015401
Proctor, J. E. ; Bhakhri, V. ; Hao, R. ; Prior, T. J. ; Scheler, T. ; Gregoryanz, E. ; Chhowalla, Manish ; Giulani, F. / Stabilization of boron carbide via silicon doping. In: Journal of Physics Condensed Matter. 2014 ; Vol. 27, No. 1.
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