Stabilization of bulk p-type and surface n-type carriers in Mg-doped InN {0001} films

Jung Hwan Song, Toru Akiyama, Arthur J Freeman

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19 Citations (Scopus)

Abstract

The formation of p-type carriers in InN {0001} films by Mg doping is theoretically investigated by means of the highly precise thin film full-potential linearized augmented plane-wave method. The first-principles calculations simultaneously simulating both p-type and n-type carriers in the bulk and surface layers, respectively, demonstrate that the formation energies of a substitutional Mg atom in the surface region are lower than those in the bulk due to the compensation mechanism. The Mg is, however, stabilized in the bulk layers due to a large diffusion-barrier height, suggesting a possible mechanism for the stabilization of Mg in the bulk and the formation of p-type carriers.

Original languageEnglish
Article number186801
JournalPhysical Review Letters
Volume101
Issue number18
DOIs
Publication statusPublished - Oct 27 2008

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stabilization
energy of formation
surface layers
plane waves
thin films
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Stabilization of bulk p-type and surface n-type carriers in Mg-doped InN {0001} films. / Song, Jung Hwan; Akiyama, Toru; Freeman, Arthur J.

In: Physical Review Letters, Vol. 101, No. 18, 186801, 27.10.2008.

Research output: Contribution to journalArticle

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