STABILIZATION OF N-TYPE SILICON PHOTOANODES IN AQUEOUS SOLUTION BY ELECTROSTATIC BINDING OF REDOX IONS INTO CHARGED POLYMERS.

Mark D. Rosenblum, Nathan S Lewis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors describe a novel approach to the stabilization of n-type semiconductor photoanodes. Most small band gap semiconductors undergo photocorrosion reactions in aqueous solutions which prevent them from sustaining conversion of light into electrical energy or fuels. The authors describe a method of improving photocurrent stability based upon the electrostatic binding of redox active ions into a polymer-coated electrode. Experimental evidence shows that modification of photoanodes with cationic polymers can leads to improved electrode stability, with photoelectrochemical efficiencies comparable to other methods of electrode modification with molecular reagents. Advantages include convenience of preparation and facile characterization of the polymer, rapid deposition of films onto a variety of surfaces, and stability of the electrostatically bound ion stems.

Original languageEnglish
Title of host publicationExtended Abstracts, Meeting - International Society of Electrochemistry
PublisherInt Soc of Electrochemistry
Pages956-958
Number of pages3
Publication statusPublished - 1984

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Rosenblum, M. D., & Lewis, N. S. (1984). STABILIZATION OF N-TYPE SILICON PHOTOANODES IN AQUEOUS SOLUTION BY ELECTROSTATIC BINDING OF REDOX IONS INTO CHARGED POLYMERS. In Extended Abstracts, Meeting - International Society of Electrochemistry (pp. 956-958). Int Soc of Electrochemistry.