Statistical equilibrium in particle channeling

B. A. Davidson, Leonard C Feldman, J. Bevk, J. P. Mannaerts

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have used a unique sample configuration consisting of thin, epitaxial films of Ge sandwiched within a Si(100) lattice to explore the conditions for statistical equilibrium in particle channeling. Indications of nonequilibrium came about from a strong asymmetry in the off-normal angular scans. We find the depth necessary to achieve statistical equilibrium to be ∼2200 Å for 1.8 MeV He particle channeling along the Si〈110〉 direction. This measurement provides a useful guide for the interpretation of channeling experiments in a variety of near-surface applications.

Original languageEnglish
Pages (from-to)135-137
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number3
DOIs
Publication statusPublished - 1987

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indication
asymmetry
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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Statistical equilibrium in particle channeling. / Davidson, B. A.; Feldman, Leonard C; Bevk, J.; Mannaerts, J. P.

In: Applied Physics Letters, Vol. 50, No. 3, 1987, p. 135-137.

Research output: Contribution to journalArticle

Davidson, BA, Feldman, LC, Bevk, J & Mannaerts, JP 1987, 'Statistical equilibrium in particle channeling', Applied Physics Letters, vol. 50, no. 3, pp. 135-137. https://doi.org/10.1063/1.97694
Davidson, B. A. ; Feldman, Leonard C ; Bevk, J. ; Mannaerts, J. P. / Statistical equilibrium in particle channeling. In: Applied Physics Letters. 1987 ; Vol. 50, No. 3. pp. 135-137.
@article{889816d020224bf68a59f348ff788ad2,
title = "Statistical equilibrium in particle channeling",
abstract = "We have used a unique sample configuration consisting of thin, epitaxial films of Ge sandwiched within a Si(100) lattice to explore the conditions for statistical equilibrium in particle channeling. Indications of nonequilibrium came about from a strong asymmetry in the off-normal angular scans. We find the depth necessary to achieve statistical equilibrium to be ∼2200 {\AA} for 1.8 MeV He particle channeling along the Si〈110〉 direction. This measurement provides a useful guide for the interpretation of channeling experiments in a variety of near-surface applications.",
author = "Davidson, {B. A.} and Feldman, {Leonard C} and J. Bevk and Mannaerts, {J. P.}",
year = "1987",
doi = "10.1063/1.97694",
language = "English",
volume = "50",
pages = "135--137",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Statistical equilibrium in particle channeling

AU - Davidson, B. A.

AU - Feldman, Leonard C

AU - Bevk, J.

AU - Mannaerts, J. P.

PY - 1987

Y1 - 1987

N2 - We have used a unique sample configuration consisting of thin, epitaxial films of Ge sandwiched within a Si(100) lattice to explore the conditions for statistical equilibrium in particle channeling. Indications of nonequilibrium came about from a strong asymmetry in the off-normal angular scans. We find the depth necessary to achieve statistical equilibrium to be ∼2200 Å for 1.8 MeV He particle channeling along the Si〈110〉 direction. This measurement provides a useful guide for the interpretation of channeling experiments in a variety of near-surface applications.

AB - We have used a unique sample configuration consisting of thin, epitaxial films of Ge sandwiched within a Si(100) lattice to explore the conditions for statistical equilibrium in particle channeling. Indications of nonequilibrium came about from a strong asymmetry in the off-normal angular scans. We find the depth necessary to achieve statistical equilibrium to be ∼2200 Å for 1.8 MeV He particle channeling along the Si〈110〉 direction. This measurement provides a useful guide for the interpretation of channeling experiments in a variety of near-surface applications.

UR - http://www.scopus.com/inward/record.url?scp=0008821086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008821086&partnerID=8YFLogxK

U2 - 10.1063/1.97694

DO - 10.1063/1.97694

M3 - Article

AN - SCOPUS:0008821086

VL - 50

SP - 135

EP - 137

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -