Stoichiometry control during deposition by ion beam sputtering

Jaya P. Nair, Ilya Zon, Matti Oron, Ronit Popovitz-Biro, Yishay Feldman, Igor Lubomirsky

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ion beam sputtering of chemical compounds is in general nonstoichiometric. The problem is especially severe for inorganic insulators because target charging and ionic emission render sputtering rates unstable. This study reports on the influence of target charging on ion beam sputtering of Al 2O 3 and LiNbO 3 films on Si and Al 2O 3/Si substrates. It was found that undesirable ionic emission could be minimized by eliminating target charging, controlled via electron to ion neutralization ratio of the incident beam. Experimental data suggest that the stoichiometric sputtering corresponds to zero target charging and thus can be used as an effective feedback parameter during deposition. When the target charging was minimal, high quality stoichiometric Al 2O 3 films were obtained without the need for oxygen supplied to the deposition chamber. The dependence of refractive index, residual stress, and specific resistance on neutralization ratio showed abrupt change in the vicinity of zero target charging. In a separate experiment, minimization of the target charging helped to maintain stoichiometry during ion beam sputtering of LiNbO 3, suggesting that this method is also beneficial for sputtering of ternary compounds.

Original languageEnglish
Pages (from-to)4784-4790
Number of pages7
JournalJournal of Applied Physics
Volume92
Issue number8
DOIs
Publication statusPublished - Oct 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Stoichiometry control during deposition by ion beam sputtering'. Together they form a unique fingerprint.

  • Cite this

    Nair, J. P., Zon, I., Oron, M., Popovitz-Biro, R., Feldman, Y., & Lubomirsky, I. (2002). Stoichiometry control during deposition by ion beam sputtering. Journal of Applied Physics, 92(8), 4784-4790. https://doi.org/10.1063/1.1502916