Strain effects in epitaxial monolayer structures

SiGe and SiSiO2 systems

J. Bevk, Leonard C Feldman, T. P. Pearsall, G. P. Schwartz, A. Ourmazd

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.

Original languageEnglish
Pages (from-to)159-169
Number of pages11
JournalMaterials Science and Engineering B
Volume6
Issue number2-3
DOIs
Publication statusPublished - 1990

Fingerprint

Monolayers
Lattice mismatch
Film growth
optoelectronic devices
atomic structure
Optoelectronic devices
Electronic structure
Physical properties
physical properties
Semiconductor materials
electronic structure
Thin films
thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Strain effects in epitaxial monolayer structures : SiGe and SiSiO2 systems. / Bevk, J.; Feldman, Leonard C; Pearsall, T. P.; Schwartz, G. P.; Ourmazd, A.

In: Materials Science and Engineering B, Vol. 6, No. 2-3, 1990, p. 159-169.

Research output: Contribution to journalArticle

Bevk, J. ; Feldman, Leonard C ; Pearsall, T. P. ; Schwartz, G. P. ; Ourmazd, A. / Strain effects in epitaxial monolayer structures : SiGe and SiSiO2 systems. In: Materials Science and Engineering B. 1990 ; Vol. 6, No. 2-3. pp. 159-169.
@article{882eaff085e74179ab278f2d2b4a4b92,
title = "Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems",
abstract = "Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4{\%} lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.",
author = "J. Bevk and Feldman, {Leonard C} and Pearsall, {T. P.} and Schwartz, {G. P.} and A. Ourmazd",
year = "1990",
doi = "10.1016/0921-5107(90)90092-P",
language = "English",
volume = "6",
pages = "159--169",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "2-3",

}

TY - JOUR

T1 - Strain effects in epitaxial monolayer structures

T2 - SiGe and SiSiO2 systems

AU - Bevk, J.

AU - Feldman, Leonard C

AU - Pearsall, T. P.

AU - Schwartz, G. P.

AU - Ourmazd, A.

PY - 1990

Y1 - 1990

N2 - Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.

AB - Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.

UR - http://www.scopus.com/inward/record.url?scp=0025446599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025446599&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(90)90092-P

DO - 10.1016/0921-5107(90)90092-P

M3 - Article

VL - 6

SP - 159

EP - 169

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2-3

ER -