Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems

J. Bevk; Leonard C Feldman; T. P. Pearsall; G. P. Schwartz; A. Ourmazd

doi:10.1016/0921-5107(90)90092-P

Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems

J. Bevk, Leonard C Feldman, T. P. Pearsall, G. P. Schwartz, A. Ourmazd

Rutgers University

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO₂ system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.

Original language	English
Pages (from-to)	159-169
Number of pages	11
Journal	Materials Science and Engineering B
Volume	6
Issue number	2-3
DOIs	https://doi.org/10.1016/0921-5107(90)90092-P
Publication status	Published - 1990

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ASJC Scopus subject areas

Materials Science(all)
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Bevk, J., Feldman, L. C., Pearsall, T. P., Schwartz, G. P., & Ourmazd, A. (1990). Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems. Materials Science and Engineering B, 6(2-3), 159-169. https://doi.org/10.1016/0921-5107(90)90092-P

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Access to Document

10.1016/0921-5107(90)90092-P