Abstract
Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.
| Original language | English |
|---|---|
| Pages (from-to) | 159-169 |
| Number of pages | 11 |
| Journal | Materials Science and Engineering B |
| Volume | 6 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 1990 |
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Fingerprint Dive into the research topics of 'Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems'. Together they form a unique fingerprint.
Cite this
Bevk, J., Feldman, L. C., Pearsall, T. P., Schwartz, G. P., & Ourmazd, A. (1990). Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems. Materials Science and Engineering B, 6(2-3), 159-169. https://doi.org/10.1016/0921-5107(90)90092-P