Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems

J. Bevk, Leonard C Feldman, T. P. Pearsall, G. P. Schwartz, A. Ourmazd

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.

Original languageEnglish
Pages (from-to)159-169
Number of pages11
JournalMaterials Science and Engineering B
Volume6
Issue number2-3
DOIs
Publication statusPublished - 1990

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ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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