Abstract
Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.
| Original language | English |
|---|---|
| Pages (from-to) | 159-169 |
| Number of pages | 11 |
| Journal | Materials Science and Engineering B |
| Volume | 6 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 1990 |
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ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Strain effects in epitaxial monolayer structures : SiGe and SiSiO2 systems. / Bevk, J.; Feldman, Leonard C; Pearsall, T. P.; Schwartz, G. P.; Ourmazd, A.
In: Materials Science and Engineering B, Vol. 6, No. 2-3, 1990, p. 159-169.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Strain effects in epitaxial monolayer structures
T2 - SiGe and SiSiO2 systems
AU - Bevk, J.
AU - Feldman, Leonard C
AU - Pearsall, T. P.
AU - Schwartz, G. P.
AU - Ourmazd, A.
PY - 1990
Y1 - 1990
N2 - Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.
AB - Strain due to lattice mismatch at semiconductor interfaces plays an important role in determining both the thin film growth mechanisms and electronic structure and physical properties of materials. The SiGe system with its 4% lattice mismatch offers an opportunity to study various strain-related interface phenomena, and to exploit strain effects in novel optoelectronic devices. A similar interplay of science and technology exists in the SiSiO2 system, where modern experimental techniques continue to provide new insights into the atomic structure of this technologically important interface.
UR - http://www.scopus.com/inward/record.url?scp=0025446599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025446599&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(90)90092-P
DO - 10.1016/0921-5107(90)90092-P
M3 - Article
AN - SCOPUS:0025446599
VL - 6
SP - 159
EP - 169
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 2-3
ER -