Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

Leonard C Feldman, J. Bevk, B. A. Davidson, H. J. Gossmann, J. P. Mannaerts

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Abstract

We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.

Original languageEnglish
Pages (from-to)664-667
Number of pages4
JournalPhysical Review Letters
Volume59
Issue number6
DOIs
Publication statusPublished - 1987

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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