Abstract
We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.
| Original language | English |
|---|---|
| Pages (from-to) | 664-667 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 59 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1987 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. / Feldman, Leonard C; Bevk, J.; Davidson, B. A.; Gossmann, H. J.; Mannaerts, J. P.
In: Physical Review Letters, Vol. 59, No. 6, 1987, p. 664-667.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling
AU - Feldman, Leonard C
AU - Bevk, J.
AU - Davidson, B. A.
AU - Gossmann, H. J.
AU - Mannaerts, J. P.
PY - 1987
Y1 - 1987
N2 - We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.
AB - We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.
UR - http://www.scopus.com/inward/record.url?scp=0000206414&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000206414&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.59.664
DO - 10.1103/PhysRevLett.59.664
M3 - Article
AN - SCOPUS:0000206414
VL - 59
SP - 664
EP - 667
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 6
ER -