We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.
ASJC Scopus subject areas
- Physics and Astronomy(all)