Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

Leonard C Feldman; J. Bevk; B. A. Davidson; H. J. Gossmann; J. P. Mannaerts

doi:10.1103/PhysRevLett.59.664

Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

Leonard C Feldman, J. Bevk, B. A. Davidson, H. J. Gossmann, J. P. Mannaerts

Rutgers University

Research output: Contribution to journal › Article

54 Citations (Scopus)

Abstract

We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.

Original language	English
Pages (from-to)	664-667
Number of pages	4
Journal	Physical Review Letters
Volume	59
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.59.664
Publication status	Published - 1987

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ion scattering

Poisson ratio

superlattices

elastic properties

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Feldman, L. C., Bevk, J., Davidson, B. A., Gossmann, H. J., & Mannaerts, J. P. (1987). Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. Physical Review Letters, 59(6), 664-667. https://doi.org/10.1103/PhysRevLett.59.664

Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. / Feldman, Leonard C; Bevk, J.; Davidson, B. A.; Gossmann, H. J.; Mannaerts, J. P.

In: Physical Review Letters, Vol. 59, No. 6, 1987, p. 664-667.

Research output: Contribution to journal › Article

Feldman, LC, Bevk, J, Davidson, BA, Gossmann, HJ & Mannaerts, JP 1987, 'Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling', Physical Review Letters, vol. 59, no. 6, pp. 664-667. https://doi.org/10.1103/PhysRevLett.59.664

Feldman LC, Bevk J, Davidson BA, Gossmann HJ, Mannaerts JP. Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. Physical Review Letters. 1987;59(6):664-667. https://doi.org/10.1103/PhysRevLett.59.664

Feldman, Leonard C ; Bevk, J. ; Davidson, B. A. ; Gossmann, H. J. ; Mannaerts, J. P. / Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. In: Physical Review Letters. 1987 ; Vol. 59, No. 6. pp. 664-667.

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10.1103/PhysRevLett.59.664