Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

Leonard C Feldman; J. Bevk; B. A. Davidson; H. J. Gossmann; J. P. Mannaerts

doi:10.1103/PhysRevLett.59.664

Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

Leonard C Feldman, J. Bevk, B. A. Davidson, H. J. Gossmann, J. P. Mannaerts

Rutgers University

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54 Citations (Scopus)

Abstract

We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.

Original language	English
Pages (from-to)	664-667
Number of pages	4
Journal	Physical Review Letters
Volume	59
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.59.664
Publication status	Published - 1987

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Feldman, L. C., Bevk, J., Davidson, B. A., Gossmann, H. J., & Mannaerts, J. P. (1987). Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. Physical Review Letters, 59(6), 664-667. https://doi.org/10.1103/PhysRevLett.59.664

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10.1103/PhysRevLett.59.664