Abstract
We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.
Original language | English |
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Pages (from-to) | 664-667 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 59 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1987 |
ASJC Scopus subject areas
- Physics and Astronomy(all)