Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

Leonard C Feldman, J. Bevk, B. A. Davidson, H. J. Gossmann, J. P. Mannaerts

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.

Original languageEnglish
Pages (from-to)664-667
Number of pages4
JournalPhysical Review Letters
Volume59
Issue number6
DOIs
Publication statusPublished - 1987

Fingerprint

ion scattering
Poisson ratio
superlattices
elastic properties

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. / Feldman, Leonard C; Bevk, J.; Davidson, B. A.; Gossmann, H. J.; Mannaerts, J. P.

In: Physical Review Letters, Vol. 59, No. 6, 1987, p. 664-667.

Research output: Contribution to journalArticle

Feldman, Leonard C ; Bevk, J. ; Davidson, B. A. ; Gossmann, H. J. ; Mannaerts, J. P. / Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling. In: Physical Review Letters. 1987 ; Vol. 59, No. 6. pp. 664-667.
@article{26fef9bbfedd41ed8bff893f45fcde69,
title = "Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling",
abstract = "We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34{\%}, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.",
author = "Feldman, {Leonard C} and J. Bevk and Davidson, {B. A.} and Gossmann, {H. J.} and Mannaerts, {J. P.}",
year = "1987",
doi = "10.1103/PhysRevLett.59.664",
language = "English",
volume = "59",
pages = "664--667",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "6",

}

TY - JOUR

T1 - Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling

AU - Feldman, Leonard C

AU - Bevk, J.

AU - Davidson, B. A.

AU - Gossmann, H. J.

AU - Mannaerts, J. P.

PY - 1987

Y1 - 1987

N2 - We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.

AB - We describe a channeling analysis of the strain associated with ultrathin (26 monolayers) epitaxial films of Ge embedded in Si. Measured strains are at the level of 34%, exceeding that accessible in bulk materials. These values, in both single-layer films and Ge-Si superlattices, are in approximate agreement with bulk elastic properties suggesting that Poissons ratio is applicable at the few-monolayer level.

UR - http://www.scopus.com/inward/record.url?scp=0000206414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000206414&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.59.664

DO - 10.1103/PhysRevLett.59.664

M3 - Article

VL - 59

SP - 664

EP - 667

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 6

ER -