Strain splitting of (formula presented) yellow orthoexciton of epitaxial orthorhombic (formula presented) films on MgO [110]

Y. Sun, Kirill Rivkin, J. Chen, J. B. Ketterson, P. Markworth, Robert P. H. Chang

Research output: Contribution to journalArticle

Abstract

We investigated the optical properties of epitaxial orthorhomic cuprous oxide films grown on MgO [110]. Absorption measurements show clear excitonic peaks up to (formula presented) Photoluminescence at 2 K shows several sharp emission peaks in the vicinity of 610 nm associated with a splitting of various (formula presented) orthoexciton energy levels. The evolution of the peaks with temperature indicates that three peaks at higher energy are due to direct recombination of (formula presented) yellow orthoexcitons and three corresponding peaks at lower energy are their phonon replicas. The symmetry of each level is identified by the polarization properties of their photoluminescence emissions. The observed splitting of the energy levels is used to calculate the coherency strain based on an earlier-parametrized theory for the level splitting by Waters et al. based on the known symmetry of the electronic states. This predicted strain is compared with that determined by x-ray diffraction measurements of the measured lattice parameters.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number24
DOIs
Publication statusPublished - Jan 1 2002

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Electron energy levels
Photoluminescence
Electronic states
Lattice constants
Oxide films
Optical properties
Diffraction
Polarization
X rays
energy levels
photoluminescence
symmetry
replicas
oxide films
lattice parameters
x ray diffraction
Temperature
optical properties
energy
polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Strain splitting of (formula presented) yellow orthoexciton of epitaxial orthorhombic (formula presented) films on MgO [110]. / Sun, Y.; Rivkin, Kirill; Chen, J.; Ketterson, J. B.; Markworth, P.; Chang, Robert P. H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 24, 01.01.2002, p. 1-8.

Research output: Contribution to journalArticle

@article{fa71e8225a2a45ac899ce4f96c096bbb,
title = "Strain splitting of (formula presented) yellow orthoexciton of epitaxial orthorhombic (formula presented) films on MgO [110]",
abstract = "We investigated the optical properties of epitaxial orthorhomic cuprous oxide films grown on MgO [110]. Absorption measurements show clear excitonic peaks up to (formula presented) Photoluminescence at 2 K shows several sharp emission peaks in the vicinity of 610 nm associated with a splitting of various (formula presented) orthoexciton energy levels. The evolution of the peaks with temperature indicates that three peaks at higher energy are due to direct recombination of (formula presented) yellow orthoexcitons and three corresponding peaks at lower energy are their phonon replicas. The symmetry of each level is identified by the polarization properties of their photoluminescence emissions. The observed splitting of the energy levels is used to calculate the coherency strain based on an earlier-parametrized theory for the level splitting by Waters et al. based on the known symmetry of the electronic states. This predicted strain is compared with that determined by x-ray diffraction measurements of the measured lattice parameters.",
author = "Y. Sun and Kirill Rivkin and J. Chen and Ketterson, {J. B.} and P. Markworth and Chang, {Robert P. H.}",
year = "2002",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.66.245315",
language = "English",
volume = "66",
pages = "1--8",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

TY - JOUR

T1 - Strain splitting of (formula presented) yellow orthoexciton of epitaxial orthorhombic (formula presented) films on MgO [110]

AU - Sun, Y.

AU - Rivkin, Kirill

AU - Chen, J.

AU - Ketterson, J. B.

AU - Markworth, P.

AU - Chang, Robert P. H.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - We investigated the optical properties of epitaxial orthorhomic cuprous oxide films grown on MgO [110]. Absorption measurements show clear excitonic peaks up to (formula presented) Photoluminescence at 2 K shows several sharp emission peaks in the vicinity of 610 nm associated with a splitting of various (formula presented) orthoexciton energy levels. The evolution of the peaks with temperature indicates that three peaks at higher energy are due to direct recombination of (formula presented) yellow orthoexcitons and three corresponding peaks at lower energy are their phonon replicas. The symmetry of each level is identified by the polarization properties of their photoluminescence emissions. The observed splitting of the energy levels is used to calculate the coherency strain based on an earlier-parametrized theory for the level splitting by Waters et al. based on the known symmetry of the electronic states. This predicted strain is compared with that determined by x-ray diffraction measurements of the measured lattice parameters.

AB - We investigated the optical properties of epitaxial orthorhomic cuprous oxide films grown on MgO [110]. Absorption measurements show clear excitonic peaks up to (formula presented) Photoluminescence at 2 K shows several sharp emission peaks in the vicinity of 610 nm associated with a splitting of various (formula presented) orthoexciton energy levels. The evolution of the peaks with temperature indicates that three peaks at higher energy are due to direct recombination of (formula presented) yellow orthoexcitons and three corresponding peaks at lower energy are their phonon replicas. The symmetry of each level is identified by the polarization properties of their photoluminescence emissions. The observed splitting of the energy levels is used to calculate the coherency strain based on an earlier-parametrized theory for the level splitting by Waters et al. based on the known symmetry of the electronic states. This predicted strain is compared with that determined by x-ray diffraction measurements of the measured lattice parameters.

UR - http://www.scopus.com/inward/record.url?scp=85038943559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038943559&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.66.245315

DO - 10.1103/PhysRevB.66.245315

M3 - Article

VL - 66

SP - 1

EP - 8

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 24

ER -