Structural and electronic properties of GaN/Al interfaces

S. Picozzi, A. Continenza, S. Massidda, Arthur J Freeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structural and electronic properties of the GaN/Al interface are determined from first principles local density full potential linearized augmented plane wave (FLAPW) calculations. The charge distribution of the gap states as a function of the distance from the interface shows that the gap states induced into the semiconductor by the presence of Al are strongly localized in the junction region. Furthermore, we find that Al does not provide good ohmic contacts on the clean nitrides considered, in contrast with experimental results on chemically treated GaN, but in agreement with recent measurements on the clean surface. We also study some auxiliary systems (all grown on a GaN substrate), i.e. the Al/AlN interface, the GaN/AlN heterojunction and the GaN/Al with an AlN intralayer (GaN-AlN/Al). The transitivity rule for the GaN/Al, AlN/Al and GaN/AlN interfaces is fairly well satisfied and small differences must be ascribed to differences in the interface morphology. Finally, we find that the AlN intralayer does not significantly affect the p-type Schottky barrier height of the GaN/Al interface.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages833-838
Number of pages6
Volume482
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period12/1/9712/4/97

Fingerprint

Electronic properties
Structural properties
Ohmic contacts
Charge distribution
Nitrides
Heterojunctions
Semiconductor materials
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Picozzi, S., Continenza, A., Massidda, S., & Freeman, A. J. (1997). Structural and electronic properties of GaN/Al interfaces. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 833-838). MRS.

Structural and electronic properties of GaN/Al interfaces. / Picozzi, S.; Continenza, A.; Massidda, S.; Freeman, Arthur J.

Materials Research Society Symposium - Proceedings. ed. / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. Vol. 482 MRS, 1997. p. 833-838.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Picozzi, S, Continenza, A, Massidda, S & Freeman, AJ 1997, Structural and electronic properties of GaN/Al interfaces. in SR Phillpot, PD Bristowe, DG Stroud & JR Smith (eds), Materials Research Society Symposium - Proceedings. vol. 482, MRS, pp. 833-838, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 12/1/97.
Picozzi S, Continenza A, Massidda S, Freeman AJ. Structural and electronic properties of GaN/Al interfaces. In Phillpot SR, Bristowe PD, Stroud DG, Smith JR, editors, Materials Research Society Symposium - Proceedings. Vol. 482. MRS. 1997. p. 833-838
Picozzi, S. ; Continenza, A. ; Massidda, S. ; Freeman, Arthur J. / Structural and electronic properties of GaN/Al interfaces. Materials Research Society Symposium - Proceedings. editor / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. Vol. 482 MRS, 1997. pp. 833-838
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