Structural and electronic properties of transition-metal/BaTiO3(001) interfaces

Fangyi Rao, Miyoung Kim, Arthur J Freeman, Shaoping Tang, Mark Anthony

Research output: Contribution to journalArticle

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Abstract

Electronic and structural properties of transition-metal/BaTiO3(001) interfaces are studied by first-principles local-density full-potential linearized augmented plane-wave calculations with slab models. Equilibrium interlayer separations between metal overlayers (for the 5d metals Ta, W, Ir, and Pt) and the BaTiO3 substrate are calculated by total-energy determinations. It is found that the preferred adsorption site for metal atoms on the BaTiO3 surface is above the O site and the metal-oxygen distance increases from Ta to Pt while the binding energy decreases. Significant hybridization is found between metal d states and the O 2p-Ti 3d states. The Fermi levels of the metals lie in the gap of BaTiO3 and metal-induced gap states, as suggested by Heine's theory [Proc. Phys. Soc. London 81, 300 (1962); Surf. Sci. 2, 1 (1964); Phys. Rev. 138, A1689 (1965)], are observed. The Schottky barrier in the interfaces is calculated by the position of EF in the gap and the dependence of the barrier height on the metal work function is different from either Schottky and Mott's or Bardeen's [Phys. Rev. 71, 717 (1947)] speculation.

Original languageEnglish
Pages (from-to)13953-13960
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number20
Publication statusPublished - May 15 1997

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Electronic properties
Transition metals
Structural properties
Metals
transition metals
electronics
metals
Fermi level
Binding energy
interlayers
slabs
plane waves
binding energy
Oxygen
Adsorption
Atoms
adsorption
oxygen
Substrates
atoms

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Structural and electronic properties of transition-metal/BaTiO3(001) interfaces. / Rao, Fangyi; Kim, Miyoung; Freeman, Arthur J; Tang, Shaoping; Anthony, Mark.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 20, 15.05.1997, p. 13953-13960.

Research output: Contribution to journalArticle

Rao, Fangyi ; Kim, Miyoung ; Freeman, Arthur J ; Tang, Shaoping ; Anthony, Mark. / Structural and electronic properties of transition-metal/BaTiO3(001) interfaces. In: Physical Review B - Condensed Matter and Materials Physics. 1997 ; Vol. 55, No. 20. pp. 13953-13960.
@article{7a4716900d624672838d5689d785d83b,
title = "Structural and electronic properties of transition-metal/BaTiO3(001) interfaces",
abstract = "Electronic and structural properties of transition-metal/BaTiO3(001) interfaces are studied by first-principles local-density full-potential linearized augmented plane-wave calculations with slab models. Equilibrium interlayer separations between metal overlayers (for the 5d metals Ta, W, Ir, and Pt) and the BaTiO3 substrate are calculated by total-energy determinations. It is found that the preferred adsorption site for metal atoms on the BaTiO3 surface is above the O site and the metal-oxygen distance increases from Ta to Pt while the binding energy decreases. Significant hybridization is found between metal d states and the O 2p-Ti 3d states. The Fermi levels of the metals lie in the gap of BaTiO3 and metal-induced gap states, as suggested by Heine's theory [Proc. Phys. Soc. London 81, 300 (1962); Surf. Sci. 2, 1 (1964); Phys. Rev. 138, A1689 (1965)], are observed. The Schottky barrier in the interfaces is calculated by the position of EF in the gap and the dependence of the barrier height on the metal work function is different from either Schottky and Mott's or Bardeen's [Phys. Rev. 71, 717 (1947)] speculation.",
author = "Fangyi Rao and Miyoung Kim and Freeman, {Arthur J} and Shaoping Tang and Mark Anthony",
year = "1997",
month = "5",
day = "15",
language = "English",
volume = "55",
pages = "13953--13960",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "20",

}

TY - JOUR

T1 - Structural and electronic properties of transition-metal/BaTiO3(001) interfaces

AU - Rao, Fangyi

AU - Kim, Miyoung

AU - Freeman, Arthur J

AU - Tang, Shaoping

AU - Anthony, Mark

PY - 1997/5/15

Y1 - 1997/5/15

N2 - Electronic and structural properties of transition-metal/BaTiO3(001) interfaces are studied by first-principles local-density full-potential linearized augmented plane-wave calculations with slab models. Equilibrium interlayer separations between metal overlayers (for the 5d metals Ta, W, Ir, and Pt) and the BaTiO3 substrate are calculated by total-energy determinations. It is found that the preferred adsorption site for metal atoms on the BaTiO3 surface is above the O site and the metal-oxygen distance increases from Ta to Pt while the binding energy decreases. Significant hybridization is found between metal d states and the O 2p-Ti 3d states. The Fermi levels of the metals lie in the gap of BaTiO3 and metal-induced gap states, as suggested by Heine's theory [Proc. Phys. Soc. London 81, 300 (1962); Surf. Sci. 2, 1 (1964); Phys. Rev. 138, A1689 (1965)], are observed. The Schottky barrier in the interfaces is calculated by the position of EF in the gap and the dependence of the barrier height on the metal work function is different from either Schottky and Mott's or Bardeen's [Phys. Rev. 71, 717 (1947)] speculation.

AB - Electronic and structural properties of transition-metal/BaTiO3(001) interfaces are studied by first-principles local-density full-potential linearized augmented plane-wave calculations with slab models. Equilibrium interlayer separations between metal overlayers (for the 5d metals Ta, W, Ir, and Pt) and the BaTiO3 substrate are calculated by total-energy determinations. It is found that the preferred adsorption site for metal atoms on the BaTiO3 surface is above the O site and the metal-oxygen distance increases from Ta to Pt while the binding energy decreases. Significant hybridization is found between metal d states and the O 2p-Ti 3d states. The Fermi levels of the metals lie in the gap of BaTiO3 and metal-induced gap states, as suggested by Heine's theory [Proc. Phys. Soc. London 81, 300 (1962); Surf. Sci. 2, 1 (1964); Phys. Rev. 138, A1689 (1965)], are observed. The Schottky barrier in the interfaces is calculated by the position of EF in the gap and the dependence of the barrier height on the metal work function is different from either Schottky and Mott's or Bardeen's [Phys. Rev. 71, 717 (1947)] speculation.

UR - http://www.scopus.com/inward/record.url?scp=0000592027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000592027&partnerID=8YFLogxK

M3 - Article

VL - 55

SP - 13953

EP - 13960

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 20

ER -