Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

Q. Zhu, Q. Ma, D. B. Buchholz, Robert P. H. Chang, M. J. Bedzyk, Thomas O Mason

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

Original languageEnglish
Article number033512
JournalJournal of Applied Physics
Volume115
Issue number3
DOIs
Publication statusPublished - 2014

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physical properties
conduction
ions
coordination number
annealing
oxygen
rutile
pulsed laser deposition
charge carriers
absorption spectroscopy
x rays
thermal stability
scattering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films. / Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, Robert P. H.; Bedzyk, M. J.; Mason, Thomas O.

In: Journal of Applied Physics, Vol. 115, No. 3, 033512, 2014.

Research output: Contribution to journalArticle

@article{18be36e0f78e409688e90425c2e2770b,
title = "Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films",
abstract = "The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2{\%}-3{\%} than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 {\AA}. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.",
author = "Q. Zhu and Q. Ma and Buchholz, {D. B.} and Chang, {Robert P. H.} and Bedzyk, {M. J.} and Mason, {Thomas O}",
year = "2014",
doi = "10.1063/1.4861378",
language = "English",
volume = "115",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

AU - Zhu, Q.

AU - Ma, Q.

AU - Buchholz, D. B.

AU - Chang, Robert P. H.

AU - Bedzyk, M. J.

AU - Mason, Thomas O

PY - 2014

Y1 - 2014

N2 - The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

AB - The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

UR - http://www.scopus.com/inward/record.url?scp=84893226027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893226027&partnerID=8YFLogxK

U2 - 10.1063/1.4861378

DO - 10.1063/1.4861378

M3 - Article

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033512

ER -