Structural damage produced in Inp(100) surfaces by plasma-employing deposition techniques

W. C. Dautremont-Smith, Leonard C Feldman

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In previous work we demonstrated that rf diode sputter deposition of an oxide onto a clean InP(l00) surface produced structural damage and/or interfacial mixing at any sputtering power. In contrast, plasma-enhanced chemical vapor deposition of SiO2 at 13.56 MHz at any plasma power was damage-free and gave an abrupt interface. Structurally damage-free means that the large majority of the surface and near-surface In and P atoms are not displaced from their lattice sites; this does not preclude the presence of electrical or optical modification. In this work, again using Rutherford backscattering under channeling conditions, we have investigated the interface between InP and a deposited dielectric or metal for various other types of plasma and sputter deposition. Dose and/or energy of species incident on the InP surface during the initial stage of deposition has been varied over the spectrum intermediate to the relative extremes of the two previously studied cases. The general conclusions are as follows. Plasma deposition is structurally damage-free, even at low frequency and at a low deposition rate to plasma power ratio, as for SiN*. Sputter deposition, however, is always damaging, even when there are no energetic negative ions incident on the InP substrate, or even when the InP substrate is remote from the plasma, as in ion beam sputter deposition. Use of a light sputtering gas (He) in place of Ar increases the magnitude of damage. Annealing at 450 °C can reduce but not remove the damage.

Original languageEnglish
Pages (from-to)873-878
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume3
Issue number3
DOIs
Publication statusPublished - 1985

Fingerprint

Plasma deposition
Sputter deposition
damage
Plasmas
Sputtering
Rutherford backscattering spectroscopy
Substrates
Plasma enhanced chemical vapor deposition
Deposition rates
Oxides
Ion beams
sputtering
Diodes
Negative ions
Gases
Metals
Annealing
Atoms
negative ions
backscattering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{c8eeaf695ee54b888d4cfed1fee5e949,
title = "Structural damage produced in Inp(100) surfaces by plasma-employing deposition techniques",
abstract = "In previous work we demonstrated that rf diode sputter deposition of an oxide onto a clean InP(l00) surface produced structural damage and/or interfacial mixing at any sputtering power. In contrast, plasma-enhanced chemical vapor deposition of SiO2 at 13.56 MHz at any plasma power was damage-free and gave an abrupt interface. Structurally damage-free means that the large majority of the surface and near-surface In and P atoms are not displaced from their lattice sites; this does not preclude the presence of electrical or optical modification. In this work, again using Rutherford backscattering under channeling conditions, we have investigated the interface between InP and a deposited dielectric or metal for various other types of plasma and sputter deposition. Dose and/or energy of species incident on the InP surface during the initial stage of deposition has been varied over the spectrum intermediate to the relative extremes of the two previously studied cases. The general conclusions are as follows. Plasma deposition is structurally damage-free, even at low frequency and at a low deposition rate to plasma power ratio, as for SiN*. Sputter deposition, however, is always damaging, even when there are no energetic negative ions incident on the InP substrate, or even when the InP substrate is remote from the plasma, as in ion beam sputter deposition. Use of a light sputtering gas (He) in place of Ar increases the magnitude of damage. Annealing at 450 °C can reduce but not remove the damage.",
author = "Dautremont-Smith, {W. C.} and Feldman, {Leonard C}",
year = "1985",
doi = "10.1116/1.573335",
language = "English",
volume = "3",
pages = "873--878",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Structural damage produced in Inp(100) surfaces by plasma-employing deposition techniques

AU - Dautremont-Smith, W. C.

AU - Feldman, Leonard C

PY - 1985

Y1 - 1985

N2 - In previous work we demonstrated that rf diode sputter deposition of an oxide onto a clean InP(l00) surface produced structural damage and/or interfacial mixing at any sputtering power. In contrast, plasma-enhanced chemical vapor deposition of SiO2 at 13.56 MHz at any plasma power was damage-free and gave an abrupt interface. Structurally damage-free means that the large majority of the surface and near-surface In and P atoms are not displaced from their lattice sites; this does not preclude the presence of electrical or optical modification. In this work, again using Rutherford backscattering under channeling conditions, we have investigated the interface between InP and a deposited dielectric or metal for various other types of plasma and sputter deposition. Dose and/or energy of species incident on the InP surface during the initial stage of deposition has been varied over the spectrum intermediate to the relative extremes of the two previously studied cases. The general conclusions are as follows. Plasma deposition is structurally damage-free, even at low frequency and at a low deposition rate to plasma power ratio, as for SiN*. Sputter deposition, however, is always damaging, even when there are no energetic negative ions incident on the InP substrate, or even when the InP substrate is remote from the plasma, as in ion beam sputter deposition. Use of a light sputtering gas (He) in place of Ar increases the magnitude of damage. Annealing at 450 °C can reduce but not remove the damage.

AB - In previous work we demonstrated that rf diode sputter deposition of an oxide onto a clean InP(l00) surface produced structural damage and/or interfacial mixing at any sputtering power. In contrast, plasma-enhanced chemical vapor deposition of SiO2 at 13.56 MHz at any plasma power was damage-free and gave an abrupt interface. Structurally damage-free means that the large majority of the surface and near-surface In and P atoms are not displaced from their lattice sites; this does not preclude the presence of electrical or optical modification. In this work, again using Rutherford backscattering under channeling conditions, we have investigated the interface between InP and a deposited dielectric or metal for various other types of plasma and sputter deposition. Dose and/or energy of species incident on the InP surface during the initial stage of deposition has been varied over the spectrum intermediate to the relative extremes of the two previously studied cases. The general conclusions are as follows. Plasma deposition is structurally damage-free, even at low frequency and at a low deposition rate to plasma power ratio, as for SiN*. Sputter deposition, however, is always damaging, even when there are no energetic negative ions incident on the InP substrate, or even when the InP substrate is remote from the plasma, as in ion beam sputter deposition. Use of a light sputtering gas (He) in place of Ar increases the magnitude of damage. Annealing at 450 °C can reduce but not remove the damage.

UR - http://www.scopus.com/inward/record.url?scp=84950555747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950555747&partnerID=8YFLogxK

U2 - 10.1116/1.573335

DO - 10.1116/1.573335

M3 - Article

VL - 3

SP - 873

EP - 878

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -