Structural properties of thin films of high dielectric constant materials on silicon

H. C. Lu, N. Yasuda, E. Garfunkel, T. Gustafsson, J. P. Chang, R. L. Opila, G. Alers

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

We have used Medium Energy Ion Scattering (MEIS) and other techniques to investigate the structure and formation mechanisms of ultrathin (less than 10 nm) layers of Ta2O5 on Si. We find that a compositionally graded oxide with <2 nm effective thickness can be formed. The film degenerates at high annealing temperatures both by roughening at the outer surface, and reacting at the interface, but a buffer layer of Si3N4 can prevent the latter effect to a certain extent. Introducing a TiN/Ti layer between Ta2O5 and Si (which may be desirable for DRAM applications) has an adverse effect on the thermal stability of the Ta2O5 overlayer due to migration and subsequent reaction of oxygen with titanium.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalMicroelectronic Engineering
Volume48
Issue number1
DOIs
Publication statusPublished - Sep 1999
EventProceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger
Duration: Jun 16 1999Jun 19 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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