Structural properties of thin films of high dielectric constant materials on silicon

H. C. Lu, N. Yasuda, Eric Garfunkel, T. Gustafsson, J. P. Chang, R. L. Opila, G. Alers

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have used Medium Energy Ion Scattering (MEIS) and other techniques to investigate the structure and formation mechanisms of ultrathin (less than 10 nm) layers of Ta2O5 on Si. We find that a compositionally graded oxide with 3N4 can prevent the latter effect to a certain extent. Introducing a TiN/Ti layer between Ta2O5 and Si (which may be desirable for DRAM applications) has an adverse effect on the thermal stability of the Ta2O5 overlayer due to migration and subsequent reaction of oxygen with titanium.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalMicroelectronic Engineering
Volume48
Issue number1
DOIs
Publication statusPublished - Sep 1999

Fingerprint

Dynamic random access storage
Silicon
Titanium
Oxides
Structural properties
Thermodynamic stability
Permittivity
Scattering
Ions
permittivity
Oxygen
Thin films
ion scattering
silicon
thin films
thermal stability
titanium
oxides
oxygen
energy

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Structural properties of thin films of high dielectric constant materials on silicon. / Lu, H. C.; Yasuda, N.; Garfunkel, Eric; Gustafsson, T.; Chang, J. P.; Opila, R. L.; Alers, G.

In: Microelectronic Engineering, Vol. 48, No. 1, 09.1999, p. 287-290.

Research output: Contribution to journalArticle

Lu, H. C. ; Yasuda, N. ; Garfunkel, Eric ; Gustafsson, T. ; Chang, J. P. ; Opila, R. L. ; Alers, G. / Structural properties of thin films of high dielectric constant materials on silicon. In: Microelectronic Engineering. 1999 ; Vol. 48, No. 1. pp. 287-290.
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