Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

J. Y. Dai, H. C. Ong, Robert P. H. Chang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

Original languageEnglish
Pages (from-to)1329-1336
Number of pages8
JournalJournal of Materials Research
Volume14
Issue number4
Publication statusPublished - Apr 1999

Fingerprint

Yttria stabilized zirconia
Pulsed laser deposition
yttria-stabilized zirconia
pulsed laser deposition
Structural properties
Thin films
thin films
Aluminum Oxide
Oxygen
Sapphire
sapphire
high pressure oxygen
oxygen
Substrates
High resolution transmission electron microscopy
Crystal orientation
x ray diffraction
Nucleation
Diffraction
nucleation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition. / Dai, J. Y.; Ong, H. C.; Chang, Robert P. H.

In: Journal of Materials Research, Vol. 14, No. 4, 04.1999, p. 1329-1336.

Research output: Contribution to journalArticle

@article{83cad85d77f04ec8b912ffabc858b270,
title = "Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition",
abstract = "Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.",
author = "Dai, {J. Y.} and Ong, {H. C.} and Chang, {Robert P. H.}",
year = "1999",
month = "4",
language = "English",
volume = "14",
pages = "1329--1336",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "4",

}

TY - JOUR

T1 - Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

AU - Dai, J. Y.

AU - Ong, H. C.

AU - Chang, Robert P. H.

PY - 1999/4

Y1 - 1999/4

N2 - Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

AB - Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

UR - http://www.scopus.com/inward/record.url?scp=0032687438&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032687438&partnerID=8YFLogxK

M3 - Article

VL - 14

SP - 1329

EP - 1336

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 4

ER -