Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

J. Y. Dai, H. C. Ong, Robert P. H. Chang

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Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

Original languageEnglish
Pages (from-to)1329-1336
Number of pages8
JournalJournal of Materials Research
Issue number4
Publication statusPublished - Apr 1999


ASJC Scopus subject areas

  • Materials Science(all)

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