Abstract
We review some recent ion scattering experiments on the structure of oxide surfaces. We show that the MgO(100) surface exhibits very small surface distortions, in agreement with recent theoretical work. For the case of the oxidation of Si(100), we show that the oxidation proceeds in three different spatially separate regions, something which disagrees with the conventional model for silicon oxidation.
| Original language | English |
|---|---|
| Pages (from-to) | 1561-1565 |
| Number of pages | 5 |
| Journal | Surface Review and Letters |
| Volume | 3 |
| Issue number | 4 |
| Publication status | Published - Aug 1996 |
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ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Surfaces and Interfaces
Cite this
Structural studies of oxide surfaces. / Gustafsson, T.; Garfunkel, E.; Gusev, E. P.; Häberle, P.; Lu, H. C.; Zhou, J. B.
In: Surface Review and Letters, Vol. 3, No. 4, 08.1996, p. 1561-1565.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structural studies of oxide surfaces
AU - Gustafsson, T.
AU - Garfunkel, E.
AU - Gusev, E. P.
AU - Häberle, P.
AU - Lu, H. C.
AU - Zhou, J. B.
PY - 1996/8
Y1 - 1996/8
N2 - We review some recent ion scattering experiments on the structure of oxide surfaces. We show that the MgO(100) surface exhibits very small surface distortions, in agreement with recent theoretical work. For the case of the oxidation of Si(100), we show that the oxidation proceeds in three different spatially separate regions, something which disagrees with the conventional model for silicon oxidation.
AB - We review some recent ion scattering experiments on the structure of oxide surfaces. We show that the MgO(100) surface exhibits very small surface distortions, in agreement with recent theoretical work. For the case of the oxidation of Si(100), we show that the oxidation proceeds in three different spatially separate regions, something which disagrees with the conventional model for silicon oxidation.
UR - http://www.scopus.com/inward/record.url?scp=0006625529&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0006625529&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0006625529
VL - 3
SP - 1561
EP - 1565
JO - Surface Review and Letters
JF - Surface Review and Letters
SN - 0218-625X
IS - 4
ER -