Structurally induced optical transitions in Ge-Si superlattices

T. P. Pearsall, J. Bevk, Leonard C Feldman, J. M. Bonar, J. P. Mannaerts, A. Ourmazd

Research output: Contribution to journalArticle

281 Citations (Scopus)

Abstract

Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.

Original languageEnglish
Pages (from-to)729-732
Number of pages4
JournalPhysical Review Letters
Volume58
Issue number7
DOIs
Publication statusPublished - 1987

Fingerprint

optical transition
superlattices
electronics
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Mannaerts, J. P., & Ourmazd, A. (1987). Structurally induced optical transitions in Ge-Si superlattices. Physical Review Letters, 58(7), 729-732. https://doi.org/10.1103/PhysRevLett.58.729

Structurally induced optical transitions in Ge-Si superlattices. / Pearsall, T. P.; Bevk, J.; Feldman, Leonard C; Bonar, J. M.; Mannaerts, J. P.; Ourmazd, A.

In: Physical Review Letters, Vol. 58, No. 7, 1987, p. 729-732.

Research output: Contribution to journalArticle

Pearsall, TP, Bevk, J, Feldman, LC, Bonar, JM, Mannaerts, JP & Ourmazd, A 1987, 'Structurally induced optical transitions in Ge-Si superlattices', Physical Review Letters, vol. 58, no. 7, pp. 729-732. https://doi.org/10.1103/PhysRevLett.58.729
Pearsall, T. P. ; Bevk, J. ; Feldman, Leonard C ; Bonar, J. M. ; Mannaerts, J. P. ; Ourmazd, A. / Structurally induced optical transitions in Ge-Si superlattices. In: Physical Review Letters. 1987 ; Vol. 58, No. 7. pp. 729-732.
@article{8c5498a17cf4468da73c849bc383ec09,
title = "Structurally induced optical transitions in Ge-Si superlattices",
abstract = "Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.",
author = "Pearsall, {T. P.} and J. Bevk and Feldman, {Leonard C} and Bonar, {J. M.} and Mannaerts, {J. P.} and A. Ourmazd",
year = "1987",
doi = "10.1103/PhysRevLett.58.729",
language = "English",
volume = "58",
pages = "729--732",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "7",

}

TY - JOUR

T1 - Structurally induced optical transitions in Ge-Si superlattices

AU - Pearsall, T. P.

AU - Bevk, J.

AU - Feldman, Leonard C

AU - Bonar, J. M.

AU - Mannaerts, J. P.

AU - Ourmazd, A.

PY - 1987

Y1 - 1987

N2 - Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.

AB - Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.

UR - http://www.scopus.com/inward/record.url?scp=0000090879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000090879&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.58.729

DO - 10.1103/PhysRevLett.58.729

M3 - Article

AN - SCOPUS:0000090879

VL - 58

SP - 729

EP - 732

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 7

ER -