Structurally induced optical transitions in Ge-Si superlattices

T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts, A. Ourmazd

Research output: Contribution to journalArticlepeer-review

290 Citations (Scopus)


Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.

Original languageEnglish
Pages (from-to)729-732
Number of pages4
JournalPhysical review letters
Issue number7
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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