Structurally induced optical transitions in Ge-Si superlattices

T. P. Pearsall, J. Bevk, Leonard C Feldman, J. M. Bonar, J. P. Mannaerts, A. Ourmazd

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Abstract

Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.

Original languageEnglish
Pages (from-to)729-732
Number of pages4
JournalPhysical Review Letters
Volume58
Issue number7
DOIs
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Mannaerts, J. P., & Ourmazd, A. (1987). Structurally induced optical transitions in Ge-Si superlattices. Physical Review Letters, 58(7), 729-732. https://doi.org/10.1103/PhysRevLett.58.729