Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se)

Ratnasabapathy G. Iyer, Daniel Bilc, S. D. Mahanti, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We describe the Tl 2SnAs 2Q 6, (Q= S, Se) compounds which consist of [SnAs 2S 6] 2- layers with the Tl + cations lying in between. Tl 2SnAs 2S 6 and Tl 2SnAs 2Se 6 crystallize in the space group P-3 with a = 6.706(4) Å, c = 7.187(6) Å and a = 6.996(3) Å, c = 7.232(4) Å respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJ. Li, M. Jansen, N. Brese, M. Kanatzidis
Pages83-88
Number of pages6
Volume848
Publication statusPublished - 2005
Event2004 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

Other

Other2004 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/0412/2/04

Fingerprint

Energy gap
Semiconductor materials
Sulfides
Band structure
Cations
Positive ions
Color

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Iyer, R. G., Bilc, D., Mahanti, S. D., & Kanatzidis, M. G. (2005). Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se). In J. Li, M. Jansen, N. Brese, & M. Kanatzidis (Eds.), Materials Research Society Symposium Proceedings (Vol. 848, pp. 83-88). [FF2.7]

Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se). / Iyer, Ratnasabapathy G.; Bilc, Daniel; Mahanti, S. D.; Kanatzidis, Mercouri G.

Materials Research Society Symposium Proceedings. ed. / J. Li; M. Jansen; N. Brese; M. Kanatzidis. Vol. 848 2005. p. 83-88 FF2.7.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iyer, RG, Bilc, D, Mahanti, SD & Kanatzidis, MG 2005, Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se). in J Li, M Jansen, N Brese & M Kanatzidis (eds), Materials Research Society Symposium Proceedings. vol. 848, FF2.7, pp. 83-88, 2004 Materials Research Society Fall Meeting, Boston, MA, United States, 11/29/04.
Iyer RG, Bilc D, Mahanti SD, Kanatzidis MG. Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se). In Li J, Jansen M, Brese N, Kanatzidis M, editors, Materials Research Society Symposium Proceedings. Vol. 848. 2005. p. 83-88. FF2.7
Iyer, Ratnasabapathy G. ; Bilc, Daniel ; Mahanti, S. D. ; Kanatzidis, Mercouri G. / Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se). Materials Research Society Symposium Proceedings. editor / J. Li ; M. Jansen ; N. Brese ; M. Kanatzidis. Vol. 848 2005. pp. 83-88
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AB - We describe the Tl 2SnAs 2Q 6, (Q= S, Se) compounds which consist of [SnAs 2S 6] 2- layers with the Tl + cations lying in between. Tl 2SnAs 2S 6 and Tl 2SnAs 2Se 6 crystallize in the space group P-3 with a = 6.706(4) Å, c = 7.187(6) Å and a = 6.996(3) Å, c = 7.232(4) Å respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.

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