STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES.

J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson, W. P. Lowe, A. M. Glass, T. P. Pearsall, J. Menendez, A. Pinczuk, A. Ourmazd

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Abstract

We report the synthesis, structural characterization, and optical studies of ultrathin Ge-Si superlattices with individual sublayers smaller than the Si unit cell, grown by MBE on (001) silicon substrates. Structures are fabricated one monolayer at a time in a configuration GeGeSiSiGeGe. . . , resulting in either ordered alloys or complex cell superlattices. Rutherford backscattering and channeling experiments on these heterostructures indicate excellent crystallinity with tetragonal distortion as high as 3. 5%. Electron diffraction patterns exhibit characteristic superlattice reflections indicative of one-dimensional layering with periodicity of four monolayers. X-ray scans along the growth direction at the (002) position in reciprocal space reveal a strong peak not observed in random GeSi alloys. This scattering is attributed indirectly to the GeSi ordered phase.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, John M. Poate
PublisherMaterials Research Soc
Pages189-196
Number of pages8
Volume67
ISBN (Print)0931837332
Publication statusPublished - 1986

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A., Lowe, W. P., Glass, A. M., Pearsall, T. P., Menendez, J., Pinczuk, A., & Ourmazd, A. (1986). STRUCTURE AND PROPERTIES OF ULTRATHIN Ge-Si SUPERLATTICES. In J. C. C. Fan, & J. M. Poate (Eds.), Materials Research Society Symposia Proceedings (Vol. 67, pp. 189-196). Materials Research Soc.