Structure and stoichiometry of (0001) 4H-SiC/oxide interface

Xingguang Zhu, Hang Dong Lee, Tian Feng, Ayayi C. Ahyi, Daniel Mastrogiovanni, Alan Wan, Eric Garfunkel, John R. Williams, Torgny Gustafsson, Leonard C. Feldman

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The 4H-SiC/SiO2 interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8× 1014cm -2 from the oxide surface down to a few monolayers beneath the SiC/ SiO2 interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.

Original languageEnglish
Article number071908
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
Publication statusPublished - Aug 16 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhu, X., Lee, H. D., Feng, T., Ahyi, A. C., Mastrogiovanni, D., Wan, A., Garfunkel, E., Williams, J. R., Gustafsson, T., & Feldman, L. C. (2010). Structure and stoichiometry of (0001) 4H-SiC/oxide interface. Applied Physics Letters, 97(7), [071908]. https://doi.org/10.1063/1.3481672