Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22

A. Mrotzek, K. S. Choi, D. Y. Chung, M. A. Lane, J. R. Ireland, P. W. Brazis, T. Hogan, C. R. Kannewurf, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the structure and thermoelectric properties of the new quaternary selenides K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+x Se22. The compound K1+xM4-2x Bi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible "rattling" K+ ions.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

Other

OtherIEEE International Symposium on Circuits and Systems (ISCAS 2001)
CountryAustralia
CitySydney, NSW
Period5/6/015/9/01

Fingerprint

Tin
Bismuth
Ions
Seebeck coefficient
Ingots
Thermal conductivity
Tunnels
Metals
Single crystals
Semiconductor materials
Atoms
bismuth lead

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mrotzek, A., Choi, K. S., Chung, D. Y., Lane, M. A., Ireland, J. R., Brazis, P. W., ... Kanatzidis, M. G. (2001). Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 4)

Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22. / Mrotzek, A.; Choi, K. S.; Chung, D. Y.; Lane, M. A.; Ireland, J. R.; Brazis, P. W.; Hogan, T.; Kannewurf, C. R.; Kanatzidis, Mercouri G.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mrotzek, A, Choi, KS, Chung, DY, Lane, MA, Ireland, JR, Brazis, PW, Hogan, T, Kannewurf, CR & Kanatzidis, MG 2001, Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.
Mrotzek A, Choi KS, Chung DY, Lane MA, Ireland JR, Brazis PW et al. Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22. In Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4. 2001
Mrotzek, A. ; Choi, K. S. ; Chung, D. Y. ; Lane, M. A. ; Ireland, J. R. ; Brazis, P. W. ; Hogan, T. ; Kannewurf, C. R. ; Kanatzidis, Mercouri G. / Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22. Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.
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N2 - We present the structure and thermoelectric properties of the new quaternary selenides K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+x Se22. The compound K1+xM4-2x Bi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible "rattling" K+ ions.

AB - We present the structure and thermoelectric properties of the new quaternary selenides K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+x Se22. The compound K1+xM4-2x Bi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible "rattling" K+ ions.

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