Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K1+xM4-2x Bi7+xSe15 (M = Sn, Pb) and K1-x Sn5-xBi11+xSe22

A. Mrotzek, K. S. Choi, D. Y. Chung, M. A. Lane, J. R. Ireland, P. W. Brazis, T. Hogan, C. R. Kannewurf, M. G. Kanatzidis

Research output: Contribution to journalConference articlepeer-review


We present the structure and thermoelectric properties of the new quaternary selenides K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+x Se22. The compound K1+xM4-2x Bi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible "rattling" K+ ions.

Original languageEnglish
Pages (from-to)Z841-Z846
JournalProceedings - IEEE International Symposium on Circuits and Systems
Publication statusPublished - Jan 1 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Structure and thermoelectric properties of new quaternary tin and lead bismuth selenides, K<sub>1+x</sub>M<sub>4-2x</sub> Bi<sub>7+x</sub>Se<sub>15</sub> (M = Sn, Pb) and K<sub>1-x</sub> Sn<sub>5-x</sub>Bi<sub>11+x</sub>Se<sub>22</sub>'. Together they form a unique fingerprint.

Cite this