Abstract
The lifetimes of the Si-H vibrational stretch modes of the [Formula presented] ([Formula presented]) and [Formula presented] ([Formula presented]) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect [Formula presented] has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex [Formula presented] is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of [Formula presented] is governed by TA phonons, while [Formula presented] is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.
| Original language | English |
|---|---|
| Number of pages | 1 |
| Journal | Physical Review Letters |
| Volume | 88 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Lüpke, G., Zhang, X., Sun, B., Fraser, A., Tolk, N. H., & Feldman, L. C. (2002). Structure-Dependent Vibrational Lifetimes of Hydrogen in Silicon. Physical Review Letters, 88(13). https://doi.org/10.1103/PhysRevLett.88.135501