Abstract
The lifetimes of the Si-H vibrational stretch modes of the [Formula presented] ([Formula presented]) and [Formula presented] ([Formula presented]) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect [Formula presented] has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex [Formula presented] is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of [Formula presented] is governed by TA phonons, while [Formula presented] is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.
| Original language | English |
|---|---|
| Number of pages | 1 |
| Journal | Physical Review Letters |
| Volume | 88 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Structure-Dependent Vibrational Lifetimes of Hydrogen in Silicon. / Lüpke, G.; Zhang, X.; Sun, B.; Fraser, A.; Tolk, N. H.; Feldman, Leonard C.
In: Physical Review Letters, Vol. 88, No. 13, 01.01.2002.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structure-Dependent Vibrational Lifetimes of Hydrogen in Silicon
AU - Lüpke, G.
AU - Zhang, X.
AU - Sun, B.
AU - Fraser, A.
AU - Tolk, N. H.
AU - Feldman, Leonard C
PY - 2002/1/1
Y1 - 2002/1/1
N2 - The lifetimes of the Si-H vibrational stretch modes of the [Formula presented] ([Formula presented]) and [Formula presented] ([Formula presented]) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect [Formula presented] has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex [Formula presented] is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of [Formula presented] is governed by TA phonons, while [Formula presented] is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.
AB - The lifetimes of the Si-H vibrational stretch modes of the [Formula presented] ([Formula presented]) and [Formula presented] ([Formula presented]) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect [Formula presented] has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex [Formula presented] is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of [Formula presented] is governed by TA phonons, while [Formula presented] is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.
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U2 - 10.1103/PhysRevLett.88.135501
DO - 10.1103/PhysRevLett.88.135501
M3 - Article
AN - SCOPUS:85038327210
VL - 88
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 13
ER -