Structure-Dependent Vibrational Lifetimes of Hydrogen in Silicon

G. Lüpke, X. Zhang, B. Sun, A. Fraser, N. H. Tolk, L. C. Feldman

Research output: Contribution to journalArticlepeer-review

Abstract

The lifetimes of the Si-H vibrational stretch modes of the [Formula presented] ([Formula presented]) and [Formula presented] ([Formula presented]) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect [Formula presented] has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex [Formula presented] is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of [Formula presented] is governed by TA phonons, while [Formula presented] is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.

Original languageEnglish
Pages (from-to)4
Number of pages1
JournalPhysical review letters
Volume88
Issue number13
DOIs
Publication statusPublished - 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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