Structure-Dependent Vibrational Lifetimes of Hydrogen in Silicon

G. Lüpke, X. Zhang, B. Sun, A. Fraser, N. H. Tolk, Leonard C Feldman

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Abstract

The lifetimes of the Si-H vibrational stretch modes of the [Formula presented] ([Formula presented]) and [Formula presented] ([Formula presented]) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect [Formula presented] has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex [Formula presented] is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of [Formula presented] is governed by TA phonons, while [Formula presented] is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.

Original languageEnglish
Number of pages1
JournalPhysical Review Letters
Volume88
Issue number13
DOIs
Publication statusPublished - Jan 1 2002

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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