Structure determination of the Si(111): B(3×3)R30°surface: Subsurface substitutional doping

R. L. Headrick, I. K. Robinson, E. Vlieg, Leonard C Feldman

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Abstract

Synchrotron x-ray diffraction has been used to analyze the (3×3)R30°reconstruction of B/Si(111). Excellent agreement is obtained with in-plane data for a model in which boron sits in every third site of threefold symmetry. Out-of-plane diffraction, however, is only consistent with boron below the surface in the fivefold-coordinated substitutional site under a silicon T4 adatom. The structure is confirmed by the growth behavior under room-temperature Si deposition in which the silicon adatom is displaced from its ordered site leaving boron in a two-dimensional ordered substitutional array.

Original languageEnglish
Pages (from-to)1253-1256
Number of pages4
JournalPhysical Review Letters
Volume63
Issue number12
DOIs
Publication statusPublished - 1989

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boron
adatoms
silicon
synchrotrons
x ray diffraction
symmetry
room temperature
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Structure determination of the Si(111) : B(3×3)R30°surface: Subsurface substitutional doping. / Headrick, R. L.; Robinson, I. K.; Vlieg, E.; Feldman, Leonard C.

In: Physical Review Letters, Vol. 63, No. 12, 1989, p. 1253-1256.

Research output: Contribution to journalArticle

Headrick, R. L. ; Robinson, I. K. ; Vlieg, E. ; Feldman, Leonard C. / Structure determination of the Si(111) : B(3×3)R30°surface: Subsurface substitutional doping. In: Physical Review Letters. 1989 ; Vol. 63, No. 12. pp. 1253-1256.
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