Structure of BaTiO3 thin films modified by film-substrate interaction

Jaya P. Nair, Natalie Stavitski, Vera Lyahovitskaya, Ilya Zon, Igor Lubomirsky

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Substrate-free crystallization of BaTiO3 thin films was investigated. It was found that the substrate-free crystallized BaTiO3 films attain a hexagonal structure, whereas the substrate-supported films always crystallize in the tetragonal phase. The substrate-free crystallized hexagonal BaTiO3 demonstrates detectable pyroelectric effect and does not exhibit phase transitions in the 25-423 K temperature range. Therefore, the substrate-free crystallized BaTiO3 represents a previously unreported phase of BaTiO3.

Original languageEnglish
Pages (from-to)195-197
Number of pages3
JournalMaterials Science in Semiconductor Processing
Volume5
Issue number2-3
DOIs
Publication statusPublished - Apr 2002

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Thin films
Substrates
thin films
interactions
Crystallization
Phase transitions
crystallization
Temperature
temperature

Keywords

  • BaTiO
  • Crystallization
  • Film-substrate interaction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Structure of BaTiO3 thin films modified by film-substrate interaction. / Nair, Jaya P.; Stavitski, Natalie; Lyahovitskaya, Vera; Zon, Ilya; Lubomirsky, Igor.

In: Materials Science in Semiconductor Processing, Vol. 5, No. 2-3, 04.2002, p. 195-197.

Research output: Contribution to journalArticle

Nair, Jaya P. ; Stavitski, Natalie ; Lyahovitskaya, Vera ; Zon, Ilya ; Lubomirsky, Igor. / Structure of BaTiO3 thin films modified by film-substrate interaction. In: Materials Science in Semiconductor Processing. 2002 ; Vol. 5, No. 2-3. pp. 195-197.
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