Abstract
The structure of excited-state transitions of individual semiconductor nanocrystals (NC) was analyzed using photoluminescence excitation (PLE) spectroscopy. The observations were rationalized by analyzing hole intraband relaxation behavior. The PLE spectra of individual NC show a few sharp band-edge peaks that can be explained in terms of a fine-structure splitting of the lowest exciton state. A sharp drop in relaxation rates near the band edge explains the development of sharp PLE features at low spectral energies.
| Original language | English |
|---|---|
| Pages (from-to) | 187402-1-187402-4 |
| Journal | Physical review letters |
| Volume | 93 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - Oct 29 2004 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Htoon, H., Cox, P. J., & Klimov, V. I. (2004). Structure of excited-state transitions of individual semiconductor nanocrystals probed by photoluminescence excitation spectroscopy. Physical review letters, 93(18), 187402-1-187402-4. https://doi.org/10.1103/PhysRevLett.93.187402