Structure of excited-state transitions of individual semiconductor nanocrystals probed by photoluminescence excitation spectroscopy

Han Htoon, Paris J. Cox, Victor I. Klimov

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The structure of excited-state transitions of individual semiconductor nanocrystals (NC) was analyzed using photoluminescence excitation (PLE) spectroscopy. The observations were rationalized by analyzing hole intraband relaxation behavior. The PLE spectra of individual NC show a few sharp band-edge peaks that can be explained in terms of a fine-structure splitting of the lowest exciton state. A sharp drop in relaxation rates near the band edge explains the development of sharp PLE features at low spectral energies.

Original languageEnglish
Article number187402
Pages (from-to)187402-1-187402-4
JournalPhysical review letters
Volume93
Issue number18
DOIs
Publication statusPublished - Oct 29 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Structure of excited-state transitions of individual semiconductor nanocrystals probed by photoluminescence excitation spectroscopy'. Together they form a unique fingerprint.

  • Cite this