Abstract
BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.
| Original language | English |
|---|---|
| Pages (from-to) | 701-703 |
| Number of pages | 3 |
| Journal | Journal of Electronic Materials |
| Volume | 22 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 1993 |
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Keywords
- BaTiO/LaAlO
- HRTEM
- OMCVD
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Electrical and Electronic Engineering
Cite this
Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3. / Chen, J.; Wills, L. A.; Wessels, B. W.; Schulz, D. L.; Marks, Tobin J.
In: Journal of Electronic Materials, Vol. 22, No. 6, 06.1993, p. 701-703.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3
AU - Chen, J.
AU - Wills, L. A.
AU - Wessels, B. W.
AU - Schulz, D. L.
AU - Marks, Tobin J
PY - 1993/6
Y1 - 1993/6
N2 - BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.
AB - BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.
KW - BaTiO/LaAlO
KW - HRTEM
KW - OMCVD
UR - http://www.scopus.com/inward/record.url?scp=0027607225&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027607225&partnerID=8YFLogxK
U2 - 10.1007/BF02666421
DO - 10.1007/BF02666421
M3 - Article
AN - SCOPUS:0027607225
VL - 22
SP - 701
EP - 703
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 6
ER -