Abstract
BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.
| Original language | English |
|---|---|
| Pages (from-to) | 701-703 |
| Number of pages | 3 |
| Journal | Journal of Electronic Materials |
| Volume | 22 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 1993 |
Keywords
- BaTiO/LaAlO
- HRTEM
- OMCVD
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Electrical and Electronic Engineering
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Cite this
Chen, J., Wills, L. A., Wessels, B. W., Schulz, D. L., & Marks, T. J. (1993). Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3. Journal of Electronic Materials, 22(6), 701-703. https://doi.org/10.1007/BF02666421