Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3

J. Chen; L. A. Wills; B. W. Wessels; D. L. Schulz; Tobin J Marks

doi:10.1007/BF02666421

Structure of organometallic chemical vapor deposited BaTiO₃ thin films on LaAIO₃

J. Chen, L. A. Wills, B. W. Wessels, D. L. Schulz, Tobin J Marks

Northwestern University

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

BaTiO₃ thin films grown on LaA1O₃ by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

Original language	English
Pages (from-to)	701-703
Number of pages	3
Journal	Journal of Electronic Materials
Volume	22
Issue number	6
DOIs	https://doi.org/10.1007/BF02666421
Publication status	Published - Jun 1993

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Keywords

BaTiO/LaAlO
HRTEM
OMCVD

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Electronic, Optical and Magnetic Materials
Materials Science(all)
Electrical and Electronic Engineering

Cite this

Chen, J., Wills, L. A., Wessels, B. W., Schulz, D. L., & Marks, T. J. (1993). Structure of organometallic chemical vapor deposited BaTiO₃ thin films on LaAIO₃. Journal of Electronic Materials, 22(6), 701-703. https://doi.org/10.1007/BF02666421

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abstract = "BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.",

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AU - Marks, Tobin J

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Access to Document

10.1007/BF02666421