Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3

J. Chen, L. A. Wills, B. W. Wessels, D. L. Schulz, Tobin J Marks

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

Original languageEnglish
Pages (from-to)701-703
Number of pages3
JournalJournal of Electronic Materials
Volume22
Issue number6
DOIs
Publication statusPublished - Jun 1993

Fingerprint

Organometallics
Vapors
vapors
Thin films
thin films
Substrates
High resolution transmission electron microscopy
Dislocations (crystals)
Epitaxial growth
epitaxy
Chemical vapor deposition
vapor deposition
transmission electron microscopy
high resolution

Keywords

  • BaTiO/LaAlO
  • HRTEM
  • OMCVD

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3. / Chen, J.; Wills, L. A.; Wessels, B. W.; Schulz, D. L.; Marks, Tobin J.

In: Journal of Electronic Materials, Vol. 22, No. 6, 06.1993, p. 701-703.

Research output: Contribution to journal › Article

Chen, J, Wills, LA, Wessels, BW, Schulz, DL & Marks, TJ 1993, 'Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3', Journal of Electronic Materials, vol. 22, no. 6, pp. 701-703. https://doi.org/10.1007/BF02666421
Chen J, Wills LA, Wessels BW, Schulz DL, Marks TJ. Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3. Journal of Electronic Materials. 1993 Jun;22(6):701-703. https://doi.org/10.1007/BF02666421
Chen, J. ; Wills, L. A. ; Wessels, B. W. ; Schulz, D. L. ; Marks, Tobin J. / Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3. In: Journal of Electronic Materials. 1993 ; Vol. 22, No. 6. pp. 701-703.
@article{d71b08991c66411a8380fa8ea16543ee,
title = "Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3",
abstract = "BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.",
keywords = "BaTiO/LaAlO, HRTEM, OMCVD",
author = "J. Chen and Wills, {L. A.} and Wessels, {B. W.} and Schulz, {D. L.} and Marks, {Tobin J}",
year = "1993",
month = "6",
doi = "10.1007/BF02666421",
language = "English",
volume = "22",
pages = "701--703",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3

AU - Chen, J.

AU - Wills, L. A.

AU - Wessels, B. W.

AU - Schulz, D. L.

AU - Marks, Tobin J

PY - 1993/6

Y1 - 1993/6

N2 - BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

AB - BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

KW - BaTiO/LaAlO

KW - HRTEM

KW - OMCVD

UR - http://www.scopus.com/inward/record.url?scp=0027607225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027607225&partnerID=8YFLogxK

U2 - 10.1007/BF02666421

DO - 10.1007/BF02666421

M3 - Article

VL - 22

SP - 701

EP - 703

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -

Access to Document