Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

A. R. Krauss, O. Auciello, J. Im, V. Smentkowski, D. M. Gruen, E. A. Irene, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi2O2)2+ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Pages351-368
Number of pages18
Volume18
Edition1-4
Publication statusPublished - 1998

Fingerprint

Ferroelectric films
Film growth
Ion beams
ion beams
ion scattering
Spectroscopy
Scattering
Ions
Oxygen
Ferroelectric thin films
Ferroelectric materials
oxygen
Capacitors
Fatigue of materials
spectroscopy
capacitors
Electrodes
electrodes
thin films

Keywords

  • Ferroelectric
  • Films
  • In situ
  • Ion scattering
  • Real-time
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Krauss, A. R., Auciello, O., Im, J., Smentkowski, V., Gruen, D. M., Irene, E. A., & Chang, R. P. H. (1998). Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. In Integrated Ferroelectrics (1-4 ed., Vol. 18, pp. 351-368)

Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. / Krauss, A. R.; Auciello, O.; Im, J.; Smentkowski, V.; Gruen, D. M.; Irene, E. A.; Chang, Robert P. H.

Integrated Ferroelectrics. Vol. 18 1-4. ed. 1998. p. 351-368.

Research output: Chapter in Book/Report/Conference proceedingChapter

Krauss, AR, Auciello, O, Im, J, Smentkowski, V, Gruen, DM, Irene, EA & Chang, RPH 1998, Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. in Integrated Ferroelectrics. 1-4 edn, vol. 18, pp. 351-368.
Krauss AR, Auciello O, Im J, Smentkowski V, Gruen DM, Irene EA et al. Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. In Integrated Ferroelectrics. 1-4 ed. Vol. 18. 1998. p. 351-368
Krauss, A. R. ; Auciello, O. ; Im, J. ; Smentkowski, V. ; Gruen, D. M. ; Irene, E. A. ; Chang, Robert P. H. / Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. Integrated Ferroelectrics. Vol. 18 1-4. ed. 1998. pp. 351-368
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