Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

A. R. Krauss, O. Auciello, J. Im, V. Smentkowski, D. M. Gruen, E. A. Irene, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi2O2)2+ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Pages351-368
Number of pages18
Volume18
Edition1-4
Publication statusPublished - 1998

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Keywords

  • Ferroelectric
  • Films
  • In situ
  • Ion scattering
  • Real-time
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Krauss, A. R., Auciello, O., Im, J., Smentkowski, V., Gruen, D. M., Irene, E. A., & Chang, R. P. H. (1998). Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis. In Integrated Ferroelectrics (1-4 ed., Vol. 18, pp. 351-368)