Abstract
We have investigated the field emission properties of diamond films grown under substrate bias conditions in a microwave plasma chemical vapor deposition system, with a substrate temperature of 800C, microwave power of 600 W, and a total pressure of 11 Torr. One group of films was grown with a substrate bias of -100 V in gas mixtures of 1% N2 and 1%-20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from +100 to -150 V in a gas mixture of 1%N2-10%CH4-89%H2. The field emission performance in terms of threshold field and emission current improved considerably as a function of increasing CH4 concentration and negative bias voltage. Ultraviolet Raman analysis showed that the field emission enhancement resulting from an increase in CH4 concentration from 1% to 5% correlates with a decrease in the sp3 bonding character in the diamond film. The dependence of field emission on negative bias voltage appears to be correlated with ion bombardment-induced damage in the film during growth. The scanning electron microscopy image of the film grown with -150 V bias showed: smaller surface topographic features as compared to films grown under 0 and +100 V bias. The film grown with a bias of -150 V showed the lowest threshold field (∼2.0 V/μm) corresponding to an emission current density of 12.7 μA/cm2. J vs E0 measurements across a length of 40 mm over the film showed a uniform threshold field (2.0±0.55 V/μm). The film grown with a positive bias (+100 V) showed a relatively poor field emission performance.
| Original language | English |
|---|---|
| Pages (from-to) | 705-709 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 17 |
| Issue number | 2 |
| Publication status | Published - 1999 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
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Studies of field emission from bias-grown diamond thin films. / Chang, Robert P. H.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 17, No. 2, 1999, p. 705-709.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Studies of field emission from bias-grown diamond thin films
AU - Chang, Robert P. H.
PY - 1999
Y1 - 1999
N2 - We have investigated the field emission properties of diamond films grown under substrate bias conditions in a microwave plasma chemical vapor deposition system, with a substrate temperature of 800C, microwave power of 600 W, and a total pressure of 11 Torr. One group of films was grown with a substrate bias of -100 V in gas mixtures of 1% N2 and 1%-20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from +100 to -150 V in a gas mixture of 1%N2-10%CH4-89%H2. The field emission performance in terms of threshold field and emission current improved considerably as a function of increasing CH4 concentration and negative bias voltage. Ultraviolet Raman analysis showed that the field emission enhancement resulting from an increase in CH4 concentration from 1% to 5% correlates with a decrease in the sp3 bonding character in the diamond film. The dependence of field emission on negative bias voltage appears to be correlated with ion bombardment-induced damage in the film during growth. The scanning electron microscopy image of the film grown with -150 V bias showed: smaller surface topographic features as compared to films grown under 0 and +100 V bias. The film grown with a bias of -150 V showed the lowest threshold field (∼2.0 V/μm) corresponding to an emission current density of 12.7 μA/cm2. J vs E0 measurements across a length of 40 mm over the film showed a uniform threshold field (2.0±0.55 V/μm). The film grown with a positive bias (+100 V) showed a relatively poor field emission performance.
AB - We have investigated the field emission properties of diamond films grown under substrate bias conditions in a microwave plasma chemical vapor deposition system, with a substrate temperature of 800C, microwave power of 600 W, and a total pressure of 11 Torr. One group of films was grown with a substrate bias of -100 V in gas mixtures of 1% N2 and 1%-20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from +100 to -150 V in a gas mixture of 1%N2-10%CH4-89%H2. The field emission performance in terms of threshold field and emission current improved considerably as a function of increasing CH4 concentration and negative bias voltage. Ultraviolet Raman analysis showed that the field emission enhancement resulting from an increase in CH4 concentration from 1% to 5% correlates with a decrease in the sp3 bonding character in the diamond film. The dependence of field emission on negative bias voltage appears to be correlated with ion bombardment-induced damage in the film during growth. The scanning electron microscopy image of the film grown with -150 V bias showed: smaller surface topographic features as compared to films grown under 0 and +100 V bias. The film grown with a bias of -150 V showed the lowest threshold field (∼2.0 V/μm) corresponding to an emission current density of 12.7 μA/cm2. J vs E0 measurements across a length of 40 mm over the film showed a uniform threshold field (2.0±0.55 V/μm). The film grown with a positive bias (+100 V) showed a relatively poor field emission performance.
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M3 - Article
AN - SCOPUS:24644484374
VL - 17
SP - 705
EP - 709
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 2
ER -