Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis

O. Auciello, A. R. Krauss, J. Im, D. M. Gruen, E. A. Irene, Robert P. H. Chang, G. E. McGuire

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Abstract

In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.

Original languageEnglish
Pages (from-to)2671-2673
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number18
Publication statusPublished - Oct 28 1996

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perovskites
ion beams
high resistance
ion scattering
oxygen
oxygen atoms
capacitors
sputtering
polarization
synthesis
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis. / Auciello, O.; Krauss, A. R.; Im, J.; Gruen, D. M.; Irene, E. A.; Chang, Robert P. H.; McGuire, G. E.

In: Applied Physics Letters, Vol. 69, No. 18, 28.10.1996, p. 2671-2673.

Research output: Contribution to journalArticle

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