Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis

O. Auciello, A. R. Krauss, J. Im, D. M. Gruen, E. A. Irene, Robert P. H. Chang, G. E. McGuire

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29 Citations (Scopus)

Abstract

In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.

Original languageEnglish
Pages (from-to)2671-2673
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number18
Publication statusPublished - Oct 28 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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