Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces

Sharon R. Lunt, Louis G. Casagrande, Bruce J. Tufts, Nathan S Lewis

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Abstract

Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.

Original languageEnglish
Pages (from-to)5766-5770
Number of pages5
JournalJournal of Physical Chemistry
Volume92
Issue number20
Publication statusPublished - Oct 6 1988

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Chemisorption
chemisorption
Metal ions
metal ions
Electrocatalysis
spectral sensitivity
Electrolytes
electrolytes
trends
Oxidation
oxidation
Electrodes
electrodes
Ions
Electric potential
electric potential
Metals
metals
ions
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

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title = "Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces",
abstract = "Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.",
author = "Lunt, {Sharon R.} and Casagrande, {Louis G.} and Tufts, {Bruce J.} and Lewis, {Nathan S}",
year = "1988",
month = "10",
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language = "English",
volume = "92",
pages = "5766--5770",
journal = "Journal of Physical Chemistry",
issn = "0022-3654",
publisher = "American Chemical Society",
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TY - JOUR

T1 - Studies of polycrystalline n-GaAs junctions

T2 - effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces

AU - Lunt, Sharon R.

AU - Casagrande, Louis G.

AU - Tufts, Bruce J.

AU - Lewis, Nathan S

PY - 1988/10/6

Y1 - 1988/10/6

N2 - Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.

AB - Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.

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