Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces

Sharon R. Lunt, Louis G. Casagrande, Bruce J. Tufts, Nathan S Lewis

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Abstract

Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.

Original languageEnglish
Pages (from-to)5766-5770
Number of pages5
JournalJournal of Physical Chemistry
Volume92
Issue number20
Publication statusPublished - Oct 6 1988

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ASJC Scopus subject areas

  • Engineering(all)
  • Physical and Theoretical Chemistry

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