Abstract
Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.
| Original language | English |
|---|---|
| Pages (from-to) | 5766-5770 |
| Number of pages | 5 |
| Journal | Journal of Physical Chemistry |
| Volume | 92 |
| Issue number | 20 |
| Publication status | Published - Oct 6 1988 |
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ASJC Scopus subject areas
- Engineering(all)
- Physical and Theoretical Chemistry
Cite this
Studies of polycrystalline n-GaAs junctions : effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces. / Lunt, Sharon R.; Casagrande, Louis G.; Tufts, Bruce J.; Lewis, Nathan S.
In: Journal of Physical Chemistry, Vol. 92, No. 20, 06.10.1988, p. 5766-5770.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Studies of polycrystalline n-GaAs junctions
T2 - effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces
AU - Lunt, Sharon R.
AU - Casagrande, Louis G.
AU - Tufts, Bruce J.
AU - Lewis, Nathan S
PY - 1988/10/6
Y1 - 1988/10/6
N2 - Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.
AB - Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se-/2- and nonaqueous CH3CN-ferrocene+/0-LiClO4 electrolytes. The n-GaAs/KOH-Se-/2- system initially exhibited poor junction behavior, but chemisorption of RuIII, RhIII, IrIII, CoIII, or OsIII ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se2- oxidation at p-GaAs, n+-GaAs, and In2O3 electrode surfaces. The n-GaAs/CH3CN system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvement being predominantly due to electrocatalytic effects.
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M3 - Article
AN - SCOPUS:0024280231
VL - 92
SP - 5766
EP - 5770
JO - Journal of Physical Chemistry
JF - Journal of Physical Chemistry
SN - 0022-3654
IS - 20
ER -