n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.
|Title of host publication||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Number of pages||4|
|Publication status||Published - 1985|
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics