STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.

Mary L. Rosenbluth, Louis G. Casagrande, Bruce J. Tufts, Nathan S Lewis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherIEEE
Pages1405-1408
Number of pages4
Publication statusPublished - 1985

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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    Rosenbluth, M. L., Casagrande, L. G., Tufts, B. J., & Lewis, N. S. (1985). STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1405-1408). IEEE.