STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.

Mary L. Rosenbluth; Louis G. Casagrande; Bruce J. Tufts; Nathan S Lewis

STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.

Mary L. Rosenbluth, Louis G. Casagrande, Bruce J. Tufts, Nathan S Lewis

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

Original language	English
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	IEEE
Pages	1405-1408
Number of pages	4
Publication status	Published - 1985

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

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Cite this

@inproceedings{c4a0674965f04d10bc4e8724d957af23,

title = "STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.",

abstract = "n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.",

author = "Rosenbluth, {Mary L.} and Casagrande, {Louis G.} and Tufts, {Bruce J.} and Lewis, {Nathan S}",

year = "1985",

language = "English",

pages = "1405--1408",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "IEEE",

}

TY - GEN

T1 - STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.

AU - Rosenbluth, Mary L.

AU - Casagrande, Louis G.

AU - Tufts, Bruce J.

AU - Lewis, Nathan S

PY - 1985

Y1 - 1985

N2 - n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

AB - n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

UR - http://www.scopus.com/inward/record.url?scp=0022332023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022332023&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022332023

SP - 1405

EP - 1408

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - IEEE

ER -