Abstract
n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publisher | IEEE |
| Pages | 1405-1408 |
| Number of pages | 4 |
| Publication status | Published - 1985 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics
Cite this
Rosenbluth, M. L., Casagrande, L. G., Tufts, B. J., & Lewis, N. S. (1985). STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1405-1408). IEEE.