Abstract
n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publisher | IEEE |
| Pages | 1405-1408 |
| Number of pages | 4 |
| Publication status | Published - 1985 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics
Cite this
STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. / Rosenbluth, Mary L.; Casagrande, Louis G.; Tufts, Bruce J.; Lewis, Nathan S.
Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, 1985. p. 1405-1408.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.
AU - Rosenbluth, Mary L.
AU - Casagrande, Louis G.
AU - Tufts, Bruce J.
AU - Lewis, Nathan S
PY - 1985
Y1 - 1985
N2 - n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.
AB - n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.
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UR - http://www.scopus.com/inward/citedby.url?scp=0022332023&partnerID=8YFLogxK
M3 - Conference contribution
SP - 1405
EP - 1408
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
PB - IEEE
ER -