STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.

Mary L. Rosenbluth, Louis G. Casagrande, Bruce J. Tufts, Nathan S Lewis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherIEEE
Pages1405-1408
Number of pages4
Publication statusPublished - 1985

Fingerprint

International System of Units
Semiconductor materials
Management information systems
Liquids
Open circuit voltage
liquids
Photocurrents
Short circuit currents
Sun
Methanol
short circuits
MIS (semiconductors)
open circuit voltage
photocurrents
sun
methyl alcohol

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Rosenbluth, M. L., Casagrande, L. G., Tufts, B. J., & Lewis, N. S. (1985). STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1405-1408). IEEE.

STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. / Rosenbluth, Mary L.; Casagrande, Louis G.; Tufts, Bruce J.; Lewis, Nathan S.

Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, 1985. p. 1405-1408.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rosenbluth, ML, Casagrande, LG, Tufts, BJ & Lewis, NS 1985, STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. in Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, pp. 1405-1408.
Rosenbluth ML, Casagrande LG, Tufts BJ, Lewis NS. STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. In Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE. 1985. p. 1405-1408
Rosenbluth, Mary L. ; Casagrande, Louis G. ; Tufts, Bruce J. ; Lewis, Nathan S. / STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES. Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, 1985. pp. 1405-1408
@inproceedings{c4a0674965f04d10bc4e8724d957af23,
title = "STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.",
abstract = "n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14{\%}. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.",
author = "Rosenbluth, {Mary L.} and Casagrande, {Louis G.} and Tufts, {Bruce J.} and Lewis, {Nathan S}",
year = "1985",
language = "English",
pages = "1405--1408",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "IEEE",

}

TY - GEN

T1 - STUDIES OF SI AND GAAS SEMICONDUCTOR/LIQUID JUNCTION DEVICES.

AU - Rosenbluth, Mary L.

AU - Casagrande, Louis G.

AU - Tufts, Bruce J.

AU - Lewis, Nathan S

PY - 1985

Y1 - 1985

N2 - n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

AB - n-Si/methanol junctions have been made which display open circuit voltages, V//o //c , of 655 mV at short circuit photocurrent densities, J//s //c , of 20 mA/cm**2 . These systems require no thermal processing steps or back surface field treatments of the Si, yet they yield unoptimized one sun AM1 efficiencies of less than 14%. Recent results in improving the performance of semiconductor/liquid junctions fabricated from Si and GaAs systems are reported in detail. The behavior of MIS systems fabricated from these liquid junction treatments are described.

UR - http://www.scopus.com/inward/record.url?scp=0022332023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022332023&partnerID=8YFLogxK

M3 - Conference contribution

SP - 1405

EP - 1408

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - IEEE

ER -