Studies of silicon photoelectrochemical cells under high injection conditions

Amit Kumar, Nathan S Lewis

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The behavior of Si/CH3OH-dimethylferrocene+/0 junctions has been investigated under high injection conditions. Open circuit voltages of (626±5) mV were obtained at short circuit photocurrent densities of 20 mA/cm2 for samples with an n+-diffused back region, point contacts on the back surface, and with a base of thickness 390 μm and a 1 ms hole lifetime. The diode quality factor and recombination current density were 1.8±0.1 and (2.6±1.5)×10-8 A/cm2, respectively. These data are consistent with recombination dominated by the base and back contact regions, and not at the Si/CH 3OH interface.

Original languageEnglish
Pages (from-to)2730-2732
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number25
DOIs
Publication statusPublished - 1990

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short circuits
open circuit voltage
photocurrents
Q factors
diodes
methylidyne
injection
current density
life (durability)
silicon
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Studies of silicon photoelectrochemical cells under high injection conditions. / Kumar, Amit; Lewis, Nathan S.

In: Applied Physics Letters, Vol. 57, No. 25, 1990, p. 2730-2732.

Research output: Contribution to journalArticle

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