The behavior of Si/CH3OH-dimethylferrocene+/0 junctions has been investigated under high injection conditions. Open circuit voltages of (626±5) mV were obtained at short circuit photocurrent densities of 20 mA/cm2 for samples with an n+-diffused back region, point contacts on the back surface, and with a base of thickness 390 μm and a 1 ms hole lifetime. The diode quality factor and recombination current density were 1.8±0.1 and (2.6±1.5)×10-8 A/cm2, respectively. These data are consistent with recombination dominated by the base and back contact regions, and not at the Si/CH 3OH interface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)