Studies of the n-GaAs/KOH-Se2 2--Se2- semiconductor/ liquid junction

Bruce J. Tufts, Ian L. Abrahams, Louis G. Casagrande, Nathan S Lewis

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The current-voltage characteristics of the n-GaAs/KOH-Se2 2--Se2- semiconductor/liquid junction have been determined for a variety of conditions, including changes in the majority carrier density, the minority carrier diffusion length, and the incident light intensity. These data provide an experimental test of previous digital simulation calculations and provide necessary data for use in further mechanistic studies of this system. Spectral response measurements have been performed to elucidate the anomalous increase in short circuit photocurrent density when the n-GaAs surfaceis textured to a low-reflectivity matte finish. Novel metal ion treatments have been discovered for n-GaAs photoanodes, and the authors have observed solar simulated efficiencies in excess of 16% for Os3+-treated n-GaAs photoanodes.

Original languageEnglish
Pages (from-to)3260-3269
Number of pages10
JournalJournal of Physical Chemistry
Volume93
Issue number8
Publication statusPublished - Jan 1 1989

ASJC Scopus subject areas

  • Engineering(all)
  • Physical and Theoretical Chemistry

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    Tufts, B. J., Abrahams, I. L., Casagrande, L. G., & Lewis, N. S. (1989). Studies of the n-GaAs/KOH-Se2 2--Se2- semiconductor/ liquid junction. Journal of Physical Chemistry, 93(8), 3260-3269.