The current-voltage characteristics of the n-GaAs/KOH-Se2 2--Se2- semiconductor/liquid junction have been determined for a variety of conditions, including changes in the majority carrier density, the minority carrier diffusion length, and the incident light intensity. These data provide an experimental test of previous digital simulation calculations and provide necessary data for use in further mechanistic studies of this system. Spectral response measurements have been performed to elucidate the anomalous increase in short circuit photocurrent density when the n-GaAs surfaceis textured to a low-reflectivity matte finish. Novel metal ion treatments have been discovered for n-GaAs photoanodes, and the authors have observed solar simulated efficiencies in excess of 16% for Os3+-treated n-GaAs photoanodes.
|Number of pages||10|
|Journal||Journal of Physical Chemistry|
|Publication status||Published - Jan 1 1989|
ASJC Scopus subject areas
- Physical and Theoretical Chemistry