Studies of the Si-SiO2 interface by MeV ion channeling

N. W. Cheung, Leonard C Feldman, P. J. Silverman, I. Stensgaard

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.

Original languageEnglish
Pages (from-to)859-861
Number of pages3
JournalApplied Physics Letters
Volume35
Issue number11
DOIs
Publication statusPublished - 1979

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backscattering
ions
geometry
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Studies of the Si-SiO2 interface by MeV ion channeling. / Cheung, N. W.; Feldman, Leonard C; Silverman, P. J.; Stensgaard, I.

In: Applied Physics Letters, Vol. 35, No. 11, 1979, p. 859-861.

Research output: Contribution to journalArticle

Cheung, NW, Feldman, LC, Silverman, PJ & Stensgaard, I 1979, 'Studies of the Si-SiO2 interface by MeV ion channeling', Applied Physics Letters, vol. 35, no. 11, pp. 859-861. https://doi.org/10.1063/1.90983
Cheung, N. W. ; Feldman, Leonard C ; Silverman, P. J. ; Stensgaard, I. / Studies of the Si-SiO2 interface by MeV ion channeling. In: Applied Physics Letters. 1979 ; Vol. 35, No. 11. pp. 859-861.
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