Abstract
By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.
Original language | English |
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Pages (from-to) | 859-861 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 35 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1979 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)