Studies of the Si-SiO2 interface by MeV ion channeling

N. W. Cheung; Leonard C Feldman; P. J. Silverman; I. Stensgaard

doi:10.1063/1.90983

Studies of the Si-SiO2 interface by MeV ion channeling

N. W. Cheung, Leonard C Feldman, P. J. Silverman, I. Stensgaard

Rutgers University

Research output: Contribution to journal › Article

55 Citations (Scopus)

Abstract

By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO₂ interface. The results indicate an abrupt Si-SiO₂ interface with one to two monolayers of Si reconstruction.

Original language	English
Pages (from-to)	859-861
Number of pages	3
Journal	Applied Physics Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1063/1.90983
Publication status	Published - 1979

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cheung, N. W., Feldman, L. C., Silverman, P. J., & Stensgaard, I. (1979). Studies of the Si-SiO2 interface by MeV ion channeling. Applied Physics Letters, 35(11), 859-861. https://doi.org/10.1063/1.90983

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abstract = "By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.",

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