Studies of the Si-SiO2 interface by MeV ion channeling

N. W. Cheung; Leonard C Feldman; P. J. Silverman; I. Stensgaard

doi:10.1063/1.90983

Studies of the Si-SiO2 interface by MeV ion channeling

N. W. Cheung, Leonard C Feldman, P. J. Silverman, I. Stensgaard

Rutgers University

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO₂ interface. The results indicate an abrupt Si-SiO₂ interface with one to two monolayers of Si reconstruction.

Original language	English
Pages (from-to)	859-861
Number of pages	3
Journal	Applied Physics Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1063/1.90983
Publication status	Published - 1979

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.90983

Fingerprint Dive into the research topics of 'Studies of the Si-SiO2 interface by MeV ion channeling'. Together they form a unique fingerprint.

Cite this

@article{1aacc941d839405784d78891ed87d932,

title = "Studies of the Si-SiO2 interface by MeV ion channeling",

abstract = "By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.",

author = "Cheung, {N. W.} and Feldman, {Leonard C} and Silverman, {P. J.} and I. Stensgaard",

year = "1979",

doi = "10.1063/1.90983",

language = "English",

volume = "35",

pages = "859--861",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Studies of the Si-SiO2 interface by MeV ion channeling

AU - Cheung, N. W.

AU - Feldman, Leonard C

AU - Silverman, P. J.

AU - Stensgaard, I.

PY - 1979

Y1 - 1979

N2 - By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.

AB - By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.

UR - http://www.scopus.com/inward/record.url?scp=0003074996&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0003074996&partnerID=8YFLogxK

U2 - 10.1063/1.90983

DO - 10.1063/1.90983

M3 - Article

AN - SCOPUS:0003074996

VL - 35

SP - 859

EP - 861

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -