Studies of the Si-SiO2 interface by MeV ion channeling

N. W. Cheung, L. C. Feldman, P. J. Silverman, I. Stensgaard

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800°C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.

Original languageEnglish
Pages (from-to)859-861
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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