STUDIES OF THE Si-SiO2 INTERFACE BY MeV ION SCATTERING.

L. C. Feldman, I. Stensgaard, P. J. Silverman, T. E. Jackman

Research output: Contribution to conferencePaper

30 Citations (Scopus)

Abstract

Rutherford backscattering and channeling have been used to determine the interface properties of thin layers of SiO//2 on Si(110). The results are consistent with a model which assumes either two nonregistered layers of Si and a sharp transiton to SiO//2 or approximately one nonregistered monolayer and about 5 A of a Si rich oxide. These two models correspond to an interface width of 4 A and 7 A respectively.

Original languageEnglish
Pages344-350
Number of pages7
DOIs
Publication statusPublished - 1978
EventProc of the Int Top Conf on the Phys of SiO2 on its Interfaces - Yorktown Heights, NY, USA
Duration: Mar 22 1978Mar 24 1978

Other

OtherProc of the Int Top Conf on the Phys of SiO2 on its Interfaces
CityYorktown Heights, NY, USA
Period3/22/783/24/78

ASJC Scopus subject areas

  • Engineering(all)

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    Feldman, L. C., Stensgaard, I., Silverman, P. J., & Jackman, T. E. (1978). STUDIES OF THE Si-SiO2 INTERFACE BY MeV ION SCATTERING.. 344-350. Paper presented at Proc of the Int Top Conf on the Phys of SiO2 on its Interfaces, Yorktown Heights, NY, USA, . https://doi.org/10.1016/b978-0-08-023049-8.50064-6