Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy

A. Steigerwald, J. Gregory, K. Varga, A. B. Hmelo, X. Liu, J. K. Furdyna, L. C. Feldman, N. Tolk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.

Original languageEnglish
Title of host publicationFundamental Science of Defects and Microstructure in Advanced Materials for Energy
Pages67-73
Number of pages7
DOIs
Publication statusPublished - Dec 1 2011
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1363
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/25/114/29/11

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Steigerwald, A., Gregory, J., Varga, K., Hmelo, A. B., Liu, X., Furdyna, J. K., Feldman, L. C., & Tolk, N. (2011). Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy. In Fundamental Science of Defects and Microstructure in Advanced Materials for Energy (pp. 67-73). (Materials Research Society Symposium Proceedings; Vol. 1363). https://doi.org/10.1557/opl.2011.1427