Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy

A. Steigerwald; J. Gregory; K. Varga; A. B. Hmelo; X. Liu; J. K. Furdyna; L. C. Feldman; N. Tolk

doi:10.1557/opl.2011.1427

Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy

A. Steigerwald, J. Gregory, K. Varga, A. B. Hmelo, X. Liu, J. K. Furdyna, L. C. Feldman, N. Tolk

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.

Original language	English
Title of host publication	Fundamental Science of Defects and Microstructure in Advanced Materials for Energy
Pages	67-73
Number of pages	7
DOIs	https://doi.org/10.1557/opl.2011.1427
Publication status	Published - Dec 1 2011
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 25 2011 → Apr 29 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1363
ISSN (Print)	0272-9172

Other

Other	2011 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	4/25/11 → 4/29/11

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Steigerwald, A., Gregory, J., Varga, K., Hmelo, A. B., Liu, X., Furdyna, J. K., Feldman, L. C., & Tolk, N. (2011). Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy. In Fundamental Science of Defects and Microstructure in Advanced Materials for Energy (pp. 67-73). (Materials Research Society Symposium Proceedings; Vol. 1363). https://doi.org/10.1557/opl.2011.1427

Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy. / Steigerwald, A.; Gregory, J.; Varga, K.; Hmelo, A. B.; Liu, X.; Furdyna, J. K.; Feldman, L. C.; Tolk, N.

Fundamental Science of Defects and Microstructure in Advanced Materials for Energy. 2011. p. 67-73 (Materials Research Society Symposium Proceedings; Vol. 1363).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Steigerwald, A, Gregory, J, Varga, K, Hmelo, AB, Liu, X, Furdyna, JK, Feldman, LC & Tolk, N 2011, Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy. in Fundamental Science of Defects and Microstructure in Advanced Materials for Energy. Materials Research Society Symposium Proceedings, vol. 1363, pp. 67-73, 2011 MRS Spring Meeting, San Francisco, CA, United States, 4/25/11. https://doi.org/10.1557/opl.2011.1427

@inproceedings{b65dfa16eec1419c86ede4c68c99cd22,

title = "Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy",

abstract = "Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.",

author = "A. Steigerwald and J. Gregory and K. Varga and Hmelo, {A. B.} and X. Liu and Furdyna, {J. K.} and Feldman, {L. C.} and N. Tolk",

year = "2011",

month = dec

day = "1",

doi = "10.1557/opl.2011.1427",

language = "English",

isbn = "9781618395634",

series = "Materials Research Society Symposium Proceedings",

pages = "67--73",

booktitle = "Fundamental Science of Defects and Microstructure in Advanced Materials for Energy",

note = "2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",

}

TY - GEN

T1 - Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy

AU - Steigerwald, A.

AU - Gregory, J.

AU - Varga, K.

AU - Hmelo, A. B.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Feldman, L. C.

AU - Tolk, N.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.

AB - Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.

UR - http://www.scopus.com/inward/record.url?scp=84860147818&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860147818&partnerID=8YFLogxK

U2 - 10.1557/opl.2011.1427

DO - 10.1557/opl.2011.1427

M3 - Conference contribution

AN - SCOPUS:84860147818

SN - 9781618395634

T3 - Materials Research Society Symposium Proceedings

SP - 67

EP - 73

BT - Fundamental Science of Defects and Microstructure in Advanced Materials for Energy

T2 - 2011 MRS Spring Meeting

Y2 - 25 April 2011 through 29 April 2011

ER -

Access to Document

10.1557/opl.2011.1427