Abstract
Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 67-73 |
| Number of pages | 7 |
| Volume | 1363 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | 2011 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 25 2011 → Apr 29 2011 |
Other
| Other | 2011 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/25/11 → 4/29/11 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy. / Steigerwald, A.; Gregory, J.; Varga, K.; Hmelo, A. B.; Liu, X.; Furdyna, J. K.; Feldman, Leonard C; Tolk, N.
Materials Research Society Symposium Proceedings. Vol. 1363 2011. p. 67-73.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy
AU - Steigerwald, A.
AU - Gregory, J.
AU - Varga, K.
AU - Hmelo, A. B.
AU - Liu, X.
AU - Furdyna, J. K.
AU - Feldman, Leonard C
AU - Tolk, N.
PY - 2011
Y1 - 2011
N2 - Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.
AB - Here we study the effect of radiation-induced point defect distributions on the optical reflectivity signal in GaAs using coherent acoustic phonon spectroscopy. We demonstrate that the presence of point defects significantly modifies the optical response, allowing estimation of the depth-dependent defect distribution in a nondestructive and noninvasive manner. We show that the observed changes are dependent on defect-induced changes to the electronic structure, namely defect-induced band tailing of the direct 1.43eV band edge. This provides a method for subsurface investigations on the complex interaction between different defects species and optoelectronic structure.
UR - http://www.scopus.com/inward/record.url?scp=84860147818&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860147818&partnerID=8YFLogxK
U2 - 10.1557/opl.2011.1427
DO - 10.1557/opl.2011.1427
M3 - Conference contribution
SN - 9781618395634
VL - 1363
SP - 67
EP - 73
BT - Materials Research Society Symposium Proceedings
ER -