STUDY OF OXYGEN TRANSPORT PROCESSES DURING PLASMA ANODIZATION OF Si BETWEEN ROOM TEMPERATURE AND 600 degree C.

J. Perriere, J. Siejka, Robert P. H. Chang

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Studies of oxygen transport mechanisms during plasma anodization of Si have been carried out using a combination of **1**8O tracing techniques and nuclear microanalysis. A thin **1**8O equals enriched ZrO//2 overlay film has been used as a source of oxygen tracers during subsequent plasma anodization of Si. The enhancement effect of the zirconia layer on the kinetics of Si anodization allows one to study the mechanisms of Si anodization between room temperature and 600 degree C. Results of the **1**8O depth distributions show that the order of oxygen atoms is largely preserved in the SiO//2 and that oxygen ions migrate during film growth. For the temperature range (25-600 degree C) studied the microscopic mechanism of oxygen transport during plasma anodization of Si involves a short-range oxygen ion migration, in contrast to the case of high-temperature thermal oxidation. The contribution of a pure thermal process via the diffusion of neutral oxygen species is negligible compared to the high-field-assisted oxygen ion migration in these plasma anodization experiments.

Original languageEnglish
Pages (from-to)2716-2724
Number of pages9
JournalJournal of Applied Physics
Volume56
Issue number10
DOIs
Publication statusPublished - Jan 1 1984

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this