STUDY OF OXYGEN TRANSPORT PROCESSES DURING PLASMA ANODIZATION OF Si BETWEEN ROOM TEMPERATURE AND 600 degree C.

J. Perriere, J. Siejka, Robert P. H. Chang

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Fingerprint Dive into the research topics of 'STUDY OF OXYGEN TRANSPORT PROCESSES DURING PLASMA ANODIZATION OF Si BETWEEN ROOM TEMPERATURE AND 600 degree C.'. Together they form a unique fingerprint.

Physics & Astronomy