Study on the annealed ZnO films grown by plasma-assisted MOCVD

Jin Zhong Wang, Xin Qiang Wang, Jian Gang Wang, Xiu Ying Jiang, Shu Ren Yang, Guo Tong Du, Ding San Gao, Xiang Liu, Hui Cao, Jun Ying Xu, Robert P. H. Chang

Research output: Contribution to journalArticle

Abstract

The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10-5/cm3, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.

Original languageEnglish
Pages (from-to)502-503
Number of pages2
JournalGongneng Cailiao/Journal of Functional Materials
Volume32
Issue number5
Publication statusPublished - Oct 2001

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Keywords

  • Optical threshold
  • Photoluminescence
  • Plasma-assisted MOCVD
  • X-ray diffraction

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Polymers and Plastics

Cite this

Wang, J. Z., Wang, X. Q., Wang, J. G., Jiang, X. Y., Yang, S. R., Du, G. T., ... Chang, R. P. H. (2001). Study on the annealed ZnO films grown by plasma-assisted MOCVD. Gongneng Cailiao/Journal of Functional Materials, 32(5), 502-503.