Studying quantum dot blinking through the addition of an engineered inorganic hole trap

Ron Tenne, Ayelet Teitelboim, Pazit Rukenstein, Maria Dyshel, Taleb Mokari, Dan Oron

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

An all-inorganic compound colloidal quantum dot incorporating a highly emissive CdSe core, which is linked by a CdS tunneling barrier to an engineered charge carrier trap composed of PbS, is designed, and its optical properties are studied in detail at the single-particle level. Study of this structure enables a deeper understanding of the link between photoinduced charging and surface trapping of charge carriers and the phenomenon of quantum dot blinking. In the presence of the hole trap, a "gray" emissive state appears, associated with charging of the core. Rapid switching is observed between the "on" and the "gray" state, although the switching dynamics in and out of the dark "off" state remain unaffected. This result completes the links in the causality chain connecting charge carrier trapping, charging of QDs, and the appearance of a "gray" emission state.

Original languageEnglish
Pages (from-to)5084-5090
Number of pages7
JournalACS Nano
Volume7
Issue number6
DOIs
Publication statusPublished - Jun 25 2013

Fingerprint

Hole traps
blinking
Charge carriers
Semiconductor quantum dots
charging
charge carriers
quantum dots
traps
trapping
Inorganic compounds
inorganic compounds
Optical properties
optical properties

Keywords

  • "gray" state
  • blinking
  • charge transfer
  • quantum dots
  • trapped states

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Tenne, R., Teitelboim, A., Rukenstein, P., Dyshel, M., Mokari, T., & Oron, D. (2013). Studying quantum dot blinking through the addition of an engineered inorganic hole trap. ACS Nano, 7(6), 5084-5090. https://doi.org/10.1021/nn4017845

Studying quantum dot blinking through the addition of an engineered inorganic hole trap. / Tenne, Ron; Teitelboim, Ayelet; Rukenstein, Pazit; Dyshel, Maria; Mokari, Taleb; Oron, Dan.

In: ACS Nano, Vol. 7, No. 6, 25.06.2013, p. 5084-5090.

Research output: Contribution to journalArticle

Tenne, R, Teitelboim, A, Rukenstein, P, Dyshel, M, Mokari, T & Oron, D 2013, 'Studying quantum dot blinking through the addition of an engineered inorganic hole trap', ACS Nano, vol. 7, no. 6, pp. 5084-5090. https://doi.org/10.1021/nn4017845
Tenne, Ron ; Teitelboim, Ayelet ; Rukenstein, Pazit ; Dyshel, Maria ; Mokari, Taleb ; Oron, Dan. / Studying quantum dot blinking through the addition of an engineered inorganic hole trap. In: ACS Nano. 2013 ; Vol. 7, No. 6. pp. 5084-5090.
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