Subnanometer imaging of adsorbate-induced electronic structure perturbation on silicon surfaces

N. P. Guisinger; N. L. Yoder; S. P. Elder; M. C. Hersam

doi:10.1021/jp709765x

Subnanometer imaging of adsorbate-induced electronic structure perturbation on silicon surfaces

N. P. Guisinger, N. L. Yoder, S. P. Elder, M. C. Hersam

Northwestern University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Room-temperature scanning tunneling microscopy is utilized to explore the consequences of a single covalent bond formed between an organic molecule, 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO), and the Si(111)-7 × 7 surface at the atomic scale. Upon binding, both topographic imaging and spectroscopic techniques reveal significant charge rearrangement within the substrate that is delocalized from the organic adsorbate. With scanning tunneling spectroscopy, the spatial extent of this charge transfer is directly visualized and determined to extend up to 2 nm from the molecule predominately within half of the Si(111)-7 × 7 unit cell. Analysis of individual differential tunneling conductance spectra suggests that the charge transfer is mediated by the back-bonds of the silicon substrate.

Original language	English
Pages (from-to)	2116-2120
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	6
DOIs	https://doi.org/10.1021/jp709765x
Publication status	Published - Feb 14 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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abstract = "Room-temperature scanning tunneling microscopy is utilized to explore the consequences of a single covalent bond formed between an organic molecule, 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO), and the Si(111)-7 × 7 surface at the atomic scale. Upon binding, both topographic imaging and spectroscopic techniques reveal significant charge rearrangement within the substrate that is delocalized from the organic adsorbate. With scanning tunneling spectroscopy, the spatial extent of this charge transfer is directly visualized and determined to extend up to 2 nm from the molecule predominately within half of the Si(111)-7 × 7 unit cell. Analysis of individual differential tunneling conductance spectra suggests that the charge transfer is mediated by the back-bonds of the silicon substrate.",

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T1 - Subnanometer imaging of adsorbate-induced electronic structure perturbation on silicon surfaces

AU - Guisinger, N. P.

AU - Yoder, N. L.

AU - Elder, S. P.

AU - Hersam, M. C.

PY - 2008/2/14

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N2 - Room-temperature scanning tunneling microscopy is utilized to explore the consequences of a single covalent bond formed between an organic molecule, 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO), and the Si(111)-7 × 7 surface at the atomic scale. Upon binding, both topographic imaging and spectroscopic techniques reveal significant charge rearrangement within the substrate that is delocalized from the organic adsorbate. With scanning tunneling spectroscopy, the spatial extent of this charge transfer is directly visualized and determined to extend up to 2 nm from the molecule predominately within half of the Si(111)-7 × 7 unit cell. Analysis of individual differential tunneling conductance spectra suggests that the charge transfer is mediated by the back-bonds of the silicon substrate.

AB - Room-temperature scanning tunneling microscopy is utilized to explore the consequences of a single covalent bond formed between an organic molecule, 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO), and the Si(111)-7 × 7 surface at the atomic scale. Upon binding, both topographic imaging and spectroscopic techniques reveal significant charge rearrangement within the substrate that is delocalized from the organic adsorbate. With scanning tunneling spectroscopy, the spatial extent of this charge transfer is directly visualized and determined to extend up to 2 nm from the molecule predominately within half of the Si(111)-7 × 7 unit cell. Analysis of individual differential tunneling conductance spectra suggests that the charge transfer is mediated by the back-bonds of the silicon substrate.

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Subnanometer imaging of adsorbate-induced electronic structure perturbation on silicon surfaces

Abstract

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