Subsolidus phase relationships in the Ga 2O 3-In 2O 3-SnO 2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2O 3(ss), In 2O 3(ss), SnO 2, Ga 3-xIn 5+xSn 2O 16, and several intergrowth phases that can be expressed as Ga 4-4xIn 4xSn n-4O 2n-2 where n is an integer. An In 2O 3-SnO 2 phase and Ga 4SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000-1400°C.
|Number of pages||8|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - Dec 1998|
ASJC Scopus subject areas
- Ceramics and Composites