Subsolidus phase relations in the Ga 2O 3-In 2O 3-SnO 2 system

Doreen D. Edwards, Thomas O Mason

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Subsolidus phase relationships in the Ga 2O 3-In 2O 3-SnO 2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2O 3(ss), In 2O 3(ss), SnO 2, Ga 3-xIn 5+xSn 2O 16, and several intergrowth phases that can be expressed as Ga 4-4xIn 4xSn n-4O 2n-2 where n is an integer. An In 2O 3-SnO 2 phase and Ga 4SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000-1400°C.

Original languageEnglish
Pages (from-to)3285-3292
Number of pages8
JournalJournal of the American Ceramic Society
Volume81
Issue number12
Publication statusPublished - Dec 1998

Fingerprint

Ternary systems
X ray diffraction
Temperature

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Subsolidus phase relations in the Ga 2O 3-In 2O 3-SnO 2 system. / Edwards, Doreen D.; Mason, Thomas O.

In: Journal of the American Ceramic Society, Vol. 81, No. 12, 12.1998, p. 3285-3292.

Research output: Contribution to journalArticle

@article{f94377e3d4374e12a620730cf4e9d4ec,
title = "Subsolidus phase relations in the Ga 2O 3-In 2O 3-SnO 2 system",
abstract = "Subsolidus phase relationships in the Ga 2O 3-In 2O 3-SnO 2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2O 3(ss), In 2O 3(ss), SnO 2, Ga 3-xIn 5+xSn 2O 16, and several intergrowth phases that can be expressed as Ga 4-4xIn 4xSn n-4O 2n-2 where n is an integer. An In 2O 3-SnO 2 phase and Ga 4SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000-1400°C.",
author = "Edwards, {Doreen D.} and Mason, {Thomas O}",
year = "1998",
month = "12",
language = "English",
volume = "81",
pages = "3285--3292",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "12",

}

TY - JOUR

T1 - Subsolidus phase relations in the Ga 2O 3-In 2O 3-SnO 2 system

AU - Edwards, Doreen D.

AU - Mason, Thomas O

PY - 1998/12

Y1 - 1998/12

N2 - Subsolidus phase relationships in the Ga 2O 3-In 2O 3-SnO 2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2O 3(ss), In 2O 3(ss), SnO 2, Ga 3-xIn 5+xSn 2O 16, and several intergrowth phases that can be expressed as Ga 4-4xIn 4xSn n-4O 2n-2 where n is an integer. An In 2O 3-SnO 2 phase and Ga 4SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000-1400°C.

AB - Subsolidus phase relationships in the Ga 2O 3-In 2O 3-SnO 2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2O 3(ss), In 2O 3(ss), SnO 2, Ga 3-xIn 5+xSn 2O 16, and several intergrowth phases that can be expressed as Ga 4-4xIn 4xSn n-4O 2n-2 where n is an integer. An In 2O 3-SnO 2 phase and Ga 4SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000-1400°C.

UR - http://www.scopus.com/inward/record.url?scp=0032301459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032301459&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032301459

VL - 81

SP - 3285

EP - 3292

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 12

ER -