Subsolidus phase relationships in the Ga2O3-In2O3-SnO2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3-xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4-4xIn4xSnn-4O2n-2 where n is an integer. An In2O3-SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000-1400°C.
|Number of pages||8|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - Dec 1998|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry