Subsolidus phase relations in the Ga2O3-In2O3-SnO2 system

Doreen D. Edwards, Thomas O. Mason

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Subsolidus phase relationships in the Ga2O3-In2O3-SnO2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3-xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4-4xIn4xSnn-4O2n-2 where n is an integer. An In2O3-SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000-1400°C.

Original languageEnglish
Pages (from-to)3285-3292
Number of pages8
JournalJournal of the American Ceramic Society
Volume81
Issue number12
DOIs
Publication statusPublished - Dec 1998

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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