Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon

R. J. Culbertson, Y. Kuk, Leonard C Feldman

Research output: Contribution to journalArticle

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Abstract

The subsurface strain associated with surface reconstruction was measured for the Ge(001)-c(4×2) and Ge(111)-c(2×8) surfaces using high energy ion scattering. In the case of the Ge(001) surface we find the equivalent of ∼3 monolayers displaced by more than 0.12 Å, in accord with dimer models of the surface reconstruction. For the Ge(111) surface displacements are observed in off-normal incidence, indicating large displacements perpendicular to the surface or other reconstructions, such as a stacking fault configuration. The relationship between subsurface strain and stacking fault models is also discussed. The subsurface strain in these two Ge surfaces is remarkably similar to that of the corresponding Si surfaces, even though the details of the surface reconstruction are different. Measurements at low temperature indicate that the strain is essentially temperature independent, as expected. Measurements of the hydrogen covered surfaces show little change is strain, a surprising result when compared to the behavior of Si(001).

Original languageEnglish
Pages (from-to)127-140
Number of pages14
JournalSurface Science
Volume167
Issue number1
DOIs
Publication statusPublished - Mar 1 1986

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Silicon
silicon
Surface reconstruction
Stacking faults
crystal defects
Dimers
Hydrogen
Monolayers
ion scattering
Scattering
Ions
Temperature
incidence
dimers

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon. / Culbertson, R. J.; Kuk, Y.; Feldman, Leonard C.

In: Surface Science, Vol. 167, No. 1, 01.03.1986, p. 127-140.

Research output: Contribution to journalArticle

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