Summary Abstract: Epitaxial growth of BaF2 on Ge and InP

J. M. Phillips; L. C. Feldman; J. M. Gibson; M. L. McDonald

doi:10.1116/1.571956

Summary Abstract: Epitaxial growth of BaF₂ on Ge and InP

J. M. Phillips, L. C. Feldman, J. M. Gibson, M. L. McDonald

Rutgers University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Original language	English
Pages (from-to)	563-564
Number of pages	2
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	1
Issue number	2
DOIs	https://doi.org/10.1116/1.571956
Publication status	Published - Apr 1983

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.571956

Cite this

@article{43bce2993a7f4a17936b5ed20b7c8f41,

title = "Summary Abstract: Epitaxial growth of BaF2 on Ge and InP",

author = "Phillips, {J. M.} and Feldman, {L. C.} and Gibson, {J. M.} and McDonald, {M. L.}",

year = "1983",

month = apr,

doi = "10.1116/1.571956",

language = "English",

volume = "1",

pages = "563--564",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Summary Abstract

T2 - Epitaxial growth of BaF2 on Ge and InP

AU - Phillips, J. M.

AU - Feldman, L. C.

AU - Gibson, J. M.

AU - McDonald, M. L.

PY - 1983/4

Y1 - 1983/4

UR - http://www.scopus.com/inward/record.url?scp=84950876043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84950876043&partnerID=8YFLogxK

U2 - 10.1116/1.571956

DO - 10.1116/1.571956

M3 - Article

AN - SCOPUS:84950876043

VL - 1

SP - 563

EP - 564

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

ER -

Summary Abstract: Epitaxial growth of BaF2 on Ge and InP

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this

Summary Abstract: Epitaxial growth of BaF₂ on Ge and InP