Summary Abstract: Epitaxial growth of BaF2 on Ge and InP

J. M. Phillips; L. C. Feldman; J. M. Gibson; M. L. McDonald

doi:10.1116/1.571956

Summary Abstract: Epitaxial growth of BaF₂ on Ge and InP

J. M. Phillips, L. C. Feldman, J. M. Gibson, M. L. McDonald

Rutgers University

Research output: Contribution to journal › Article

9 Citations (Scopus)

Original language	English
Pages (from-to)	563-564
Number of pages	2
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	1
Issue number	2
DOIs	https://doi.org/10.1116/1.571956
Publication status	Published - Apr 1983

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.571956

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Phillips, J. M., Feldman, L. C., Gibson, J. M., & McDonald, M. L. (1983). Summary Abstract: Epitaxial growth of BaF₂ on Ge and InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1(2), 563-564. https://doi.org/10.1116/1.571956

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