| Original language | English |
|---|---|
| Pages (from-to) | 563-564 |
| Number of pages | 2 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 1 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1983 |
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Epitaxial growth
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
Phillips, J. M., Feldman, L. C., Gibson, J. M., & McDonald, M. L. (1983). Summary Abstract: Epitaxial growth of BaF2 on Ge and InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1(2), 563-564. https://doi.org/10.1116/1.571956
Summary Abstract : Epitaxial growth of BaF2 on Ge and InP. / Phillips, J. M.; Feldman, Leonard C; Gibson, J. M.; McDonald, M. L.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 1, No. 2, 1983, p. 563-564.Research output: Contribution to journal › Article
Phillips, JM, Feldman, LC, Gibson, JM & McDonald, ML 1983, 'Summary Abstract: Epitaxial growth of BaF2 on Ge and InP', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 1, no. 2, pp. 563-564. https://doi.org/10.1116/1.571956
Phillips JM, Feldman LC, Gibson JM, McDonald ML. Summary Abstract: Epitaxial growth of BaF2 on Ge and InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1983;1(2):563-564. https://doi.org/10.1116/1.571956
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