Summary Abstract: Epitaxial growth of BaF2 on Ge and InP

J. M. Phillips, Leonard C Feldman, J. M. Gibson, M. L. McDonald

Research output: Contribution to journal › Article

9 Citations (Scopus)
Original languageEnglish
Pages (from-to)563-564
Number of pages2
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume1
Issue number2
DOIs
Publication statusPublished - 1983

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Epitaxial growth

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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Summary Abstract : Epitaxial growth of BaF2 on Ge and InP. / Phillips, J. M.; Feldman, Leonard C; Gibson, J. M.; McDonald, M. L.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 1, No. 2, 1983, p. 563-564.

Research output: Contribution to journal › Article

Phillips, JM, Feldman, LC, Gibson, JM & McDonald, ML 1983, 'Summary Abstract: Epitaxial growth of BaF2 on Ge and InP', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 1, no. 2, pp. 563-564. https://doi.org/10.1116/1.571956
Phillips JM, Feldman LC, Gibson JM, McDonald ML. Summary Abstract: Epitaxial growth of BaF2 on Ge and InP. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1983;1(2):563-564. https://doi.org/10.1116/1.571956
Phillips, J. M. ; Feldman, Leonard C ; Gibson, J. M. ; McDonald, M. L. / Summary Abstract : Epitaxial growth of BaF2 on Ge and InP. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1983 ; Vol. 1, No. 2. pp. 563-564.
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