Summary Abstract

Initial stages of interface formation in group IV-IV heterostructures: Sn on Ge(100)c2x4 and Ge(111)c2x8

H. J. Gossmann, Leonard C Feldman

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)998-999
Number of pages2
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume4
Issue number3
DOIs
Publication statusPublished - 1986

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Heterojunctions

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Summary Abstract: Initial stages of interface formation in group IV-IV heterostructures: Sn on Ge(100)c2x4 and Ge(111)c2x8",
author = "Gossmann, {H. J.} and Feldman, {Leonard C}",
year = "1986",
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journal = "Journal of Vacuum Science and Technology A",
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