Summary Abstract

Surface-etching kinetics of hydrogen plasma on III-V compound semiconductors

C. W. Tu, Robert P. H. Chang, A. R. Schlier

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)637-638
Number of pages2
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume1
Issue number2
DOIs
Publication statusPublished - 1983

Fingerprint

hydrogen plasma
Etching
etching
Plasmas
Hydrogen
Kinetics
kinetics
III-V semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Summary Abstract: Surface-etching kinetics of hydrogen plasma on III-V compound semiconductors",
author = "Tu, {C. W.} and Chang, {Robert P. H.} and Schlier, {A. R.}",
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journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
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number = "2",

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AU - Tu, C. W.

AU - Chang, Robert P. H.

AU - Schlier, A. R.

PY - 1983

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

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