Summary Abstract

The influence of reconstruction on epitaxial growth: Ge on Si(100)-2×1 and Si(111)-7×7

H. J. Gossmann, Leonard C Feldman

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1515-1516
Number of pages2
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume3
Issue number3
DOIs
Publication statusPublished - 1985

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Epitaxial growth

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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