Superconductivity and strong intrinsic defects in LaPd1-xBi 2

Fei Han; Christos D. Malliakas; Constantinos C. Stoumpos; Mihai Sturza; Helmut Claus; Duck Young Chung; Mercouri G. Kanatzidis

doi:10.1103/PhysRevB.88.144511

Superconductivity and strong intrinsic defects in LaPd_1-xBi ₂

Fei Han, Christos D. Malliakas, Constantinos C. Stoumpos, Mihai Sturza, Helmut Claus, Duck Young Chung, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Two new phases LaPd_1-xBi₂ and CePd _1-xBi₂ were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi₂-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above T_c are observed in LaPd_1-xBi₂. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd_1-xBi₂. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd_1-xBi₂. The paramagnetic CePd_1-xBi₂ is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

Original language	English
Article number	144511
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	88
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.88.144511
Publication status	Published - Oct 22 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Superconductivity and strong intrinsic defects in LaPd1-xBi 2",

abstract = "Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.",

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AU - Han, Fei

AU - Malliakas, Christos D.

AU - Stoumpos, Constantinos C.

AU - Sturza, Mihai

AU - Claus, Helmut

AU - Chung, Duck Young

AU - Kanatzidis, Mercouri G.

PY - 2013/10/22

Y1 - 2013/10/22

N2 - Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

AB - Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

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