Superconductivity and strong intrinsic defects in LaPd1-xBi 2

Fei Han; Christos D. Malliakas; Constantinos C. Stoumpos; Mihai Sturza; Helmut Claus; Duck Young Chung; Mercouri G. Kanatzidis

doi:10.1103/PhysRevB.88.144511

Superconductivity and strong intrinsic defects in LaPd_1-xBi ₂

Fei Han, Christos D. Malliakas, Constantinos C. Stoumpos, Mihai Sturza, Helmut Claus, Duck Young Chung, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Two new phases LaPd_1-xBi₂ and CePd _1-xBi₂ were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi₂-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above T_c are observed in LaPd_1-xBi₂. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd_1-xBi₂. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd_1-xBi₂. The paramagnetic CePd_1-xBi₂ is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

Original language	English
Article number	144511
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	88
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.88.144511
Publication status	Published - Oct 22 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.88.144511

Fingerprint Dive into the research topics of 'Superconductivity and strong intrinsic defects in LaPd<sub>1-x</sub>Bi <sub>2</sub>'. Together they form a unique fingerprint.

Cite this

@article{a0deb0a6283e43889913f9ca40c9216a,

title = "Superconductivity and strong intrinsic defects in LaPd1-xBi 2",

abstract = "Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.",

author = "Fei Han and Malliakas, {Christos D.} and Stoumpos, {Constantinos C.} and Mihai Sturza and Helmut Claus and Chung, {Duck Young} and Kanatzidis, {Mercouri G.}",

year = "2013",

month = oct,

day = "22",

doi = "10.1103/PhysRevB.88.144511",

language = "English",

volume = "88",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "14",

}

TY - JOUR

T1 - Superconductivity and strong intrinsic defects in LaPd1-xBi 2

AU - Han, Fei

AU - Malliakas, Christos D.

AU - Stoumpos, Constantinos C.

AU - Sturza, Mihai

AU - Claus, Helmut

AU - Chung, Duck Young

AU - Kanatzidis, Mercouri G.

PY - 2013/10/22

Y1 - 2013/10/22

N2 - Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

AB - Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

UR - http://www.scopus.com/inward/record.url?scp=84887065207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887065207&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.88.144511

DO - 10.1103/PhysRevB.88.144511

M3 - Article

AN - SCOPUS:84887065207

VL - 88

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 14

M1 - 144511