Superconductivity and strong intrinsic defects in LaPd1-xBi 2

Fei Han, Christos D. Malliakas, Constantinos C. Stoumpos, Mihai Sturza, Helmut Claus, Duck Young Chung, Mercouri G. Kanatzidis

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Two new phases LaPd1-xBi2 and CePd 1-xBi2 were obtained by growing single crystals in Bi flux. They adopt the tetragonal ZrCuSi2-type structure and feature Bi-square nets and PbO-type PdBi layers with significant partial Pd occupancy. Bulk superconductivity at 2.1 K and metallic behavior above Tc are observed in LaPd1-xBi2. A small residual resistance ratio (RRR) indicates a strong scattering effect induced by the Pd vacancies, which implies an s-wave pairing symmetry in LaPd1-xBi2. The broadening of the resistivity transition was measured under different magnetic fields demonstrating a high upper critical field of 3 T. Hall effect measurements reveal dominantly electron-like charge carriers and single-band transport behavior in LaPd1-xBi2. The paramagnetic CePd1-xBi2 is nonsuperconducting but shows antiferromagnetic ordering below 6 K.

Original languageEnglish
Article number144511
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number14
DOIs
Publication statusPublished - Oct 22 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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