Abstract
The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 5293-5304 |
| Number of pages | 12 |
| Journal | Chemistry of Materials |
| Volume | 30 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Aug 14 2018 |
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ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry
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Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6 . / Chen, Haijie; Claus, Helmut; Bao, Jin Ke; Stoumpos, Constantinos C.; Chung, Duck Young; Kwok, Wai Kwong; Kanatzidis, Mercouri G.
In: Chemistry of Materials, Vol. 30, No. 15, 14.08.2018, p. 5293-5304.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6
AU - Chen, Haijie
AU - Claus, Helmut
AU - Bao, Jin Ke
AU - Stoumpos, Constantinos C.
AU - Chung, Duck Young
AU - Kwok, Wai Kwong
AU - Kanatzidis, Mercouri G
PY - 2018/8/14
Y1 - 2018/8/14
N2 - The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.
AB - The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.
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U2 - 10.1021/acs.chemmater.8b02030
DO - 10.1021/acs.chemmater.8b02030
M3 - Article
VL - 30
SP - 5293
EP - 5304
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 15
ER -