TY - JOUR
T1 - Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6
AU - Chen, Haijie
AU - Claus, Helmut
AU - Bao, Jin Ke
AU - Stoumpos, Constantinos C.
AU - Chung, Duck Young
AU - Kwok, Wai Kwong
AU - Kanatzidis, Mercouri G.
N1 - Funding Information:
This research was primarily performed in the Materials Science Division of Argonne National Laboratory and supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. SEM/ EDS was conducted by the use of the EPIC, Keck-II, and/or SPID facility(ies) of Northwestern University’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); and the Keck Foundation; and the State of Illinois, through the IIN.
PY - 2018/8/14
Y1 - 2018/8/14
N2 - The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.
AB - The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.
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U2 - 10.1021/acs.chemmater.8b02030
DO - 10.1021/acs.chemmater.8b02030
M3 - Article
AN - SCOPUS:85048956445
VL - 30
SP - 5293
EP - 5304
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 15
ER -